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    Semiconductor device having reduced-damage active region and method of manufacturing the same
    1.
    发明授权
    Semiconductor device having reduced-damage active region and method of manufacturing the same 有权
    具有减小损坏的有源区的半导体器件及其制造方法

    公开(公告)号：US09472466B2

    公开(公告)日：2016-10-18

    申请号：US14607804

    申请日：2015-01-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ki-chul Kim

    IPC: H01L21/336 ,  H01L21/8238 ,  H01L29/78

    CPC classification number: H01L21/823878 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/7843

    Abstract: A semiconductor device according to example embodiments may include a substrate having an NMOS area and a PMOS area, isolation regions and well regions formed in the substrate, gate patterns formed on the substrate between the isolation regions, source/drain regions formed in the substrate between the gate patterns and the isolation regions, source/drain silicide regions formed in the source/drain regions, a tensile stress layer formed on the NMOS area, and a compressive stress layer formed on the PMOS area, wherein the tensile stress layer and compressive stress layer may overlap at a boundary region of the NMOS area and the PMOS area. The semiconductor devices according to example embodiments and methods of manufacturing the same may increase the stress effect on the active region while reducing or preventing surface damage to the active region.

    Abstract translation: 根据示例实施例的半导体器件可以包括具有NMOS区域和PMOS区域的衬底，形成在衬底中的隔离区域和阱区域，形成在隔离区域之间的衬底上的栅极图案，在衬底中形成的源极/漏极区域 源极/漏极区域中形成的栅极图案和隔离区域，源极/漏极硅化物区域，形成在NMOS区域上的拉伸应力层和形成在PMOS区域上的压应力层，其中拉伸应力层和压应力 层可以在NMOS区域和PMOS区域的边界区域处重叠。 根据示例性实施例的半导体器件及其制造方法可以增加对有源区域的应力作用，同时减少或防止对有源区域的表面损伤。

    GAS SUPPLY PIPES AND CHEMICAL VAPOR DEPOSITION APPARATUS
    3.
    发明申请
    GAS SUPPLY PIPES AND CHEMICAL VAPOR DEPOSITION APPARATUS 审中-公开
    气体供应管道和化学蒸气沉积装置

    公开(公告)号：US20140144380A1

    公开(公告)日：2014-05-29

    申请号：US13687642

    申请日：2012-11-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung-ho Kang ,  Bong-jin Kuh ,  Ki-chul Kim ,  Jin-kwon Bok ,  Yong-kyu Joo ,  Sang-cheol Ha

    IPC: C23C16/455

    CPC classification number: C23C16/45572 ,  C23C16/45578 ,  Y10T137/6416

    Abstract: A gas supply pipe and a chemical vapor deposition (CVD) apparatus including the gas supply pipe. The gas supply pipe includes: a first pipe connected to a gas storage apparatus via a gas supply line to supply a reacting gas into a reacting furnace; and a second pipe thermally contacting the first pipe to cool the first pipe, wherein a first end of the second pipe is connected to a cooling medium supplying unit via a cooling medium line such that a cooling medium circulates inside the second pipe, and a second, opposite end of the second pipe is connected to a cooling medium collecting unit.

    Abstract translation: 包括气体供给管的气体供给管和化学气相沉积（CVD）装置。 气体供给管包括：第一管，其经由供气管连接到气体存储装置，以将反应气体供应到反应炉中; 以及与所述第一管热接触以冷却所述第一管的第二管，其中所述第二管的第一端经由冷却介质管线连接到冷却介质供给单元，使得冷却介质在所述第二管内部循环， 第二管的相对端连接到冷却介质收集单元。

    Methods of forming epitaxial layers
    7.
    发明授权
    Methods of forming epitaxial layers 有权
    形成外延层的方法

    公开(公告)号：US08993420B2

    公开(公告)日：2015-03-31

    申请号：US14133944

    申请日：2013-12-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joong-han Shin ,  Bong-jin Kuh ,  Ki-chul Kim ,  Jeong-meung Kim ,  Eun-ha Lee ,  Jong-sung Lim ,  Han-mei Choi

    IPC: H01L21/36 ,  H01L21/02

    CPC classification number: H01L21/02381 ,  H01L21/02532 ,  H01L21/02667

    Abstract: A method of forming an epitaxial layer includes forming a plurality of first insulation patterns in a substrate, the plurality of first insulation patterns spaced apart from each other, forming first epitaxial patterns on the plurality of first insulation patterns, forming second insulation patterns between the plurality of first insulation patterns to contact the plurality of first insulation patterns, and forming second epitaxial patterns on the second insulation patterns and between the first epitaxial patterns to contact the first epitaxial patterns, the first epitaxial patterns and the second epitaxial patterns forming a single epitaxial layer.

    Abstract translation: 形成外延层的方法包括在基板中形成多个第一绝缘图案，多个第一绝缘图案彼此间隔开，在多个第一绝缘图案上形成第一外延图案，在多个第一绝缘图案之间形成第二绝缘图案 的第一绝缘图案以接触所述多个第一绝缘图案，以及在所述第二绝缘图案上和所述第一外延图案之间以及所述第一外延图案之间形成第二外延图案以接触所述第一外延图案，所述第一外延图案和所述第二外延图案形成单个外延层 。

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