公开(公告)号：US20190006485A1

公开(公告)日：2019-01-03

申请号：US15865531

申请日：2018-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tea Won KIM ,  Yong Suk TAK ,  Ki Yeon PARK

IPC: H01L29/66

CPC classification number: H01L29/6656 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/4966 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method for fabricating a semiconductor device includes forming a stacked structure including at least one sacrificial layer and at least one semiconductor layer alternately stacked on a substrate, forming a dummy gate structure on the stacked structure, etching a recess in the stacked structure using the dummy gate structure as a mask, etching portions of the sacrificial layer exposed by the recess to form an etched sacrificial layer, forming a first spacer film on the etched sacrificial layer, forming a second spacer film on the first spacer film, the second spacer film including a material different from a material of the first spacer film, removing a first portion of the second spacer film, such that a second portion of the second spacer film remains, and forming a third spacer film on the second portion of the second spacer film.

公开(公告)号：US20160049336A1

公开(公告)日：2016-02-18

申请号：US14825556

申请日：2015-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Jong HAN ,  Bon Young KOO ,  Ki Yeon PARK ,  Jae Young PARK ,  Sun Young LEE ,  Kyung In CHOI

IPC: H01L21/8234 ,  H01L21/308

CPC classification number: H01L21/3081 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/76224

Abstract: A method for manufacturing a semiconductor device includes forming a trench defining a plurality of active fins in a substrate, forming a sacrificial layer on the plurality of active fins, forming a sacrificial oxide layer, and removing the sacrificial oxide layer. The forming the sacrificial oxide layer includes heat-treating the sacrificial layer and surfaces of the plurality of active fins.

Abstract translation: 一种用于制造半导体器件的方法包括在衬底中形成限定多个活性鳍片的沟槽，在多个活性鳍片上形成牺牲层，形成牺牲氧化物层，以及去除牺牲氧化物层。 形成牺牲氧化物层包括热处理牺牲层和多个活性鳍片的表面。