公开(公告)号：US20190006485A1

公开(公告)日：2019-01-03

申请号：US15865531

申请日：2018-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tea Won KIM ,  Yong Suk TAK ,  Ki Yeon PARK

IPC: H01L29/66

CPC classification number: H01L29/6656 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/4966 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method for fabricating a semiconductor device includes forming a stacked structure including at least one sacrificial layer and at least one semiconductor layer alternately stacked on a substrate, forming a dummy gate structure on the stacked structure, etching a recess in the stacked structure using the dummy gate structure as a mask, etching portions of the sacrificial layer exposed by the recess to form an etched sacrificial layer, forming a first spacer film on the etched sacrificial layer, forming a second spacer film on the first spacer film, the second spacer film including a material different from a material of the first spacer film, removing a first portion of the second spacer film, such that a second portion of the second spacer film remains, and forming a third spacer film on the second portion of the second spacer film.