Ring member with air holes and substrate processing system including the same

    公开(公告)号:US10312059B2

    公开(公告)日:2019-06-04

    申请号:US15255626

    申请日:2016-09-02

    Abstract: A substrate processing system includes a wall liner, an electrostatic chuck in the wall liner to hold a substrate, and a ring member including a focus ring and a side ring. The focus ring is on an edge region of the electrostatic chuck and the side ring encloses an outer side surface of the focus ring and a side surface of the electrostatic chuck. The side ring includes air holes extending from a bottom surface of the ring member towards a top portion of the ring member and extending from the top portion of the ring member towards an outer side surface of the ring member.

    System for fabricating a semiconductor device

    公开(公告)号:US10892142B2

    公开(公告)日:2021-01-12

    申请号:US16182737

    申请日:2018-11-07

    Abstract: A system for fabricating a semiconductor device may include a chamber, an electrostatic chuck used to load a substrate, a power source supplying an RF power to the electrostatic chuck, an impedance matcher between the power source and the electrostatic chuck, and a power transmission unit connecting the electrostatic chuck to the impedance matcher. The power transmission unit may include a power rod, which is connected to the electrostatic chuck and has a first outer diameter, and a coaxial cable. The coaxial cable may include an inner wire, an outer wire, and a dielectric material between the outer and inner wires. The inner wire connects the power rod to the impedance matcher and has a second outer diameter less than the first outer diameter. The outer wire is connected to the chamber and is provided to enclose the inner wire and has a first inner diameter less than the first outer diameter and greater than the second outer diameter. A ratio of the first inner diameter to the second outer diameter is greater than a dielectric constant of the dielectric material and less than three times the dielectric constant of the dielectric material.

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