公开(公告)号：US20180350957A1

公开(公告)日：2018-12-06

申请号：US16041025

申请日：2018-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Jong-Ryul Jun ,  Eun-A Kim ,  Jong-Min Lee

IPC: H01L29/66 ,  H01L49/02 ,  H01L21/027 ,  H01L21/306 ,  H01L21/768

CPC classification number: H01L29/66795 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/30604 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L28/00 ,  H01L29/66621

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

公开(公告)号：US20180012955A1

公开(公告)日：2018-01-11

申请号：US15712365

申请日：2017-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

IPC: H01L49/02 ,  H01L27/108 ,  H01L27/08

CPC classification number: H01L28/90 ,  H01L27/0805 ,  H01L27/10808 ,  H01L27/10817 ,  H01L27/10847 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/86 ,  H01L28/88 ,  H01L28/92

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

公开(公告)号：US10692968B2

公开(公告)日：2020-06-23

申请号：US16697484

申请日：2019-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

IPC: H01L27/108 ,  H01L49/02 ,  H01L27/08

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

公开(公告)号：US10439048B2

公开(公告)日：2019-10-08

申请号：US16041025

申请日：2018-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Jong-Ryul Jun ,  Eun-A Kim ,  Jong-Min Lee

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/306 ,  H01L21/027 ,  H01L49/02 ,  H01L21/033 ,  H01L21/311

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

公开(公告)号：US20230217646A1

公开(公告)日：2023-07-06

申请号：US17820231

申请日：2022-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Seungjin Kim ,  Sangchul Yang ,  Jeon Il Lee ,  Hoin Lee

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L28/91 ,  H01L28/92 ,  H01L27/10855 ,  H01L28/75

Abstract: A semiconductor device includes a vertical stack of ring-shaped electrodes that are electrically connected together into a top electrode of a capacitor, on a semiconductor substrate. A bottom electrode of the capacitor is also provided, which extends vertically in a direction orthogonal to a surface of the substrate and through centers of the vertical stack of ring-shaped electrodes. An electrically insulating bottom supporting pattern is provided, which extends between a lowermost one of the ring-shaped electrodes and an intermediate one of the ring-shaped electrodes.

公开(公告)号：US10211282B2

公开(公告)日：2019-02-19

申请号：US15712365

申请日：2017-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

IPC: H01L27/108 ,  H01L49/02 ,  H01L27/08

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

公开(公告)号：US10050129B2

公开(公告)日：2018-08-14

申请号：US15437563

申请日：2017-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Jong-Ryul Jun ,  Eun-A Kim ,  Jong-Min Lee

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/768 ,  H01L21/306 ,  H01L21/027

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.