公开(公告)号：US20240155836A1

公开(公告)日：2024-05-09

申请号：US18492821

申请日：2023-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonyoung Kang ,  Hoju Song ,  Kanguk Kim ,  Seokhyun Kim ,  Youngjun Kim ,  Jooncheol Kim ,  Jinwoong Kim ,  Hoin Ryu ,  Hyeran Lee

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/02 ,  H10B12/315 ,  H10B12/34 ,  H10B12/482

Abstract: Semiconductor devices may include: a substrate including a plurality of active areas defined by a device isolation layer; a plurality of bit lines extending on the substrate in a first horizontal direction; a plurality of insulation fences that are spaced apart from each other in the first horizontal direction in a space between two adjacent bit lines among the plurality of bit lines on the substrate; a plurality of buried contacts that are between the adjacent two bit lines among the plurality of bit lines and are arranged alternately with the plurality of insulation fences along the first horizontal direction on the substrate, the plurality of buried contacts being connected to the plurality of active areas, respectively; and a plurality of insulating layer, each of which is between a respective one of the plurality of insulation fences and a respective one of the plurality of buried contacts.