Device and method of delivering item along route

    公开(公告)号:US12256851B2

    公开(公告)日:2025-03-25

    申请号:US17940821

    申请日:2022-09-08

    Abstract: Provided is an electronic device configured to generate a route including a point of departure and a first destination determined based on order information, while the electronic device is moved along the route using a driver, in response to not receiving an order from the first destination on which seating information indicating at least one seated customer is identified, perform an operation of outputting information indicating a serving tray accommodating a basic item based on the electronic device reaching the first destination, and based on a drive along the route being completed, in response to not delivering, to the first destination, at least one item indicated in an order received from the first destination, exclude the first destination from the route.

    STORAGE DEVICE AND OPERATING METHOD THEREOF

    公开(公告)号:US20230138032A1

    公开(公告)日:2023-05-04

    申请号:US17806333

    申请日:2022-06-10

    Abstract: A method of operating a storage device includes: sensing an external voltage supplied from a host device; selecting a data transfer mode, where the data transfer mode is either a normal mode or a brown-out mode according to the external voltage; and performing a write operation or a read operation according to the selected mode, wherein: the data transfer mode is selected as the normal mode when the external voltage is within a normal range between a first operation voltage and a second operation voltage, and the data transfer mode is selected as the brown-out mode when the external voltage is within a low power range below the normal range and between the second operation voltage and a power-off detection voltage; and wherein one or more types of input/output operations of the host device are supported in both the normal mode and the brown-out mode.

    SEMICONDUCTOR DEVICE
    7.
    发明申请

    公开(公告)号:US20240371762A1

    公开(公告)日:2024-11-07

    申请号:US18434391

    申请日:2024-02-06

    Abstract: An example semiconductor device includes an active region extending in a first direction and including first conductivity-type impurities, an ion doped region extending in the first direction in the active region and including second conductivity-type impurities, a gate structure extending in a second direction, intersecting the first direction, disposed on the active region and traversing the active region, a source/drain region on the active region on at least one side of the gate structure, a device isolation layer surrounding the active region, an interlayer insulating layer on the device isolation layer and covering the gate structure and the source/drain region, a vertical power structure extending in a third direction, perpendicular to the first and second directions, and passing through the device isolation layer and the interlayer insulating layer, and a bottom wiring connected to the vertical power structure and contacting a bottom surface of the active region.

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