公开(公告)号：US20200051977A1

公开(公告)日：2020-02-13

申请号：US16444252

申请日：2019-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-young Lim ,  Jae-ho Park ,  Sang-hoon Baek ,  Hyeon-gyu You ,  Dal-hee Lee

IPC: H01L27/088 ,  H01L29/06 ,  H01L23/535

Abstract: Provided is an integrated circuit including: at least one active region extending in a first row in a first direction; at least one active region extending in a second row in the first direction; and a multiple height cell including the at least one active region in the first row, the at least one active region in the second row, at least one gate line extending in a second direction crossing the first direction, wherein each of the at least one active region in the first row and the at least one active region in the second row is terminated by a diffusion break.

公开(公告)号：US11101267B2

公开(公告)日：2021-08-24

申请号：US16444252

申请日：2019-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-young Lim ,  Jae-ho Park ,  Sang-hoon Baek ,  Hyeon-gyu You ,  Dal-hee Lee

IPC: H01L27/088 ,  H01L23/535 ,  H01L29/06 ,  H01L27/092 ,  H01L27/02 ,  H01L21/8234 ,  H02M7/00

Abstract: Provided is an integrated circuit including: at least one active region extending in a first row in a first direction; at least one active region extending in a second row in the first direction; and a multiple height cell including the at least one active region in the first row, the at least one active region in the second row, at least one gate line extending in a second direction crossing the first direction, wherein each of the at least one active region in the first row and the at least one active region in the second row is terminated by a diffusion break.

公开(公告)号：US11239151B2

公开(公告)日：2022-02-01

申请号：US16886020

申请日：2020-05-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-gyum Kim ,  Ha-young Kim ,  Tae-joong Song ,  Jong-hoon Jung ,  Gi-young Yang ,  Jin-young Lim

IPC: H01L23/50 ,  H01L29/788 ,  H01L23/528 ,  H01L27/02 ,  H01L27/118 ,  H01L23/498

Abstract: A standard cell of an IC includes a cell area including a transistor configured to determine a function of the standard cell; a first dummy area and a second dummy area respectively adjacent to two sides of the cell area in a first direction; and an active area extending in the first direction across the cell area, the first dummy area, and the second dummy area. The active area includes a first active area and a second active area spaced apart from each other in a second direction perpendicular to the first direction and extend parallel to each other in the first direction. At least one of the first active area and the second active area provided in the first dummy area is biased, and at least one of the first active area and the second active area provided in the second dummy area is biased.

公开(公告)号：US10354947B2

公开(公告)日：2019-07-16

申请号：US15871206

申请日：2018-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-gyum Kim ,  Ha-young Kim ,  Tae-joong Song ,  Jong-hoon Jung ,  Gi-young Yang ,  Jin-young Lim

IPC: H01L23/50 ,  H01L29/788 ,  H01L23/528 ,  H01L27/02 ,  H01L27/118 ,  H01L23/498

Abstract: An integrated circuit (IC) may include a plurality of standard cells. At least one standard cell of the plurality of standard cells may include a power rail configured to supply power to the at least one standard cell, the power rail extending in a first direction, a cell area including at least one transistor configured to determine a function of the at least one standard cell, a first dummy area and a second dummy area respectively adjacent to two sides of the cell area in the first direction, and an active area extending in the first direction across the cell area, the first dummy area, and the second dummy area. A region of the active area, which is included in the first dummy area or the second dummy area, is electrically connected to the power rail.

公开(公告)号：US10672702B2

公开(公告)日：2020-06-02

申请号：US16433092

申请日：2019-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-gyum Kim ,  Ha-young Kim ,  Tae-joong Song ,  Jong-hoon Jung ,  Gi-young Yang ,  Jin-young Lim

IPC: H01L23/50 ,  H01L29/788 ,  H01L23/528 ,  H01L27/02 ,  H01L27/118 ,  H01L23/498

Abstract: A standard cell of an IC includes a cell area including a transistor configured to determine a function of the standard cell; a first dummy area and a second dummy area respectively adjacent to two sides of the cell area in a first direction; and an active area extending in the first direction across the cell area, the first dummy area, and the second dummy area. The active area includes a first active area and a second active area spaced apart from each other in a second direction perpendicular to the first direction and extend parallel to each other in the first direction. At least one of the first active area and the second active area provided in the first dummy area is biased, and at least one of the first active area and the second active area provided in the second dummy area is biased.

公开(公告)号：US20190123237A1

公开(公告)日：2019-04-25

申请号：US15906539

申请日：2018-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan SAKONG ,  Byoung-kyun Kim ,  Jin-young Lim ,  Jae-sung Hyun

IPC: H01L33/02 ,  H01L33/32 ,  H01L33/12 ,  H01L33/06 ,  H01L33/00

Abstract: A light-emitting device includes a light-emitting structure including a first-conductivity-type nitride semiconductor layer on a substrate, an active layer on the first-conductivity-type nitride semiconductor layer, and a second-conductivity-type nitride semiconductor layer on the active layer, and a buffer layer between the substrate and the light-emitting structure. The buffer layer includes a plurality of voids. The plurality of voids extend vertically into the buffer layer from a surface of the buffer layer. The surface of the buffer layer is proximate to the light-emitting structure. The plurality of voids have different horizontal sectional areas.

公开(公告)号：US20170062675A1

公开(公告)日：2017-03-02

申请号：US15219454

申请日：2016-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-young Lim ,  Tan Sakong ,  Eun-deok Sim ,  Suk-ho Yoon ,  Jeong-wook Lee

IPC: H01L33/58 ,  H01L33/00 ,  H01L33/32 ,  H01L33/16 ,  H01L33/44

CPC classification number: H01L33/58 ,  H01L33/0075 ,  H01L33/486 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A method of manufacturing a light emitting diode (LED) includes forming a first material layer on a substrate, forming a second material layer on the first material layer, forming a photomask pattern on the second material layer, performing a first etching on the second material layer and a portion of the first material layer by using the photomask pattern as an etch mask, removing the photomask pattern, and forming a plurality of isolated structures by performing a second etching on the remaining portion of the first material layer until a top surface of the substrate is exposed.

Abstract translation: 一种制造发光二极管（LED）的方法包括在基板上形成第一材料层，在第一材料层上形成第二材料层，在第二材料层上形成光掩模图案，对第二材料进行第一蚀刻 层和一部分第一材料层，通过使用光掩模图案作为蚀刻掩模，去除光掩模图案，以及通过对第一材料层的剩余部分进行第二蚀刻形成多个隔离结构，直到第 衬底被暴露。