公开(公告)号：US20250006654A1

公开(公告)日：2025-01-02

申请号：US18630178

申请日：2024-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghye BAEK ,  Jeonghyun KIM ,  Hyunjae KANG ,  Ilhwan KIM ,  Jongsu KIM ,  Youngsik PARK ,  Muyoung LEE ,  Sangho JO

IPC: H01L23/544

Abstract: A semiconductor device includes a semiconductor substrate, a first test pattern disposed on the semiconductor substrate, and a second test pattern located adjacent to the first test pattern. The first test pattern includes an overlay pattern, and the second test pattern includes a test element group.

公开(公告)号：US20230352421A1

公开(公告)日：2023-11-02

申请号：US18094786

申请日：2023-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungsik PARK ,  Jeonghyun KIM ,  Jonghwa BAEK ,  Hyunju SONG ,  Bumjoon YOUN

IPC: H01L23/544 ,  H01L27/088

CPC classification number: H01L23/544 ,  H01L27/088 ,  H01L2223/54426 ,  H01L29/66439

Abstract: A semiconductor device includes a substrate including a key region, a dummy active pattern provided on the key region, a dummy channel pattern provided on the dummy active pattern, the dummy channel pattern including a first plurality of semiconductor patterns spaced apart from each other, an epitaxial pattern connected to the dummy channel pattern, and a first sub-key pattern provided on the dummy channel pattern. The first sub-key pattern encloses a top surface, a bottom surface, and side surfaces of each of the first plurality of semiconductor patterns.

公开(公告)号：US20220122218A1

公开(公告)日：2022-04-21

申请号：US17451790

申请日：2021-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junkeun YOON ,  Kideok KIM ,  Minsoo KIM ,  Jeonghyun KIM

IPC: G06T3/40 ,  G06T7/12

Abstract: An electronic device and a controlling method of the electronic device is disclosed. Specifically, the electronic device according to the disclosure may identify, based on receiving a user input for expanding an outer area of a first image, a plurality of objects included in the first image, and obtain a first segmentation image including segmentation information on areas corresponding to the respective objects, obtain a second segmentation image in which an outer area of the first segmentation image is expanded based on the segmentation information, obtain a second image in which segmentation information included in the second segmentation image is converted to RGB information, obtain a third image by reflecting a feature of the first image to the second image based on the segmentation information, and provide the obtained third image.

公开(公告)号：US20230260925A1

公开(公告)日：2023-08-17

申请号：US17962593

申请日：2022-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonghyun KIM ,  SANGJIN KIM ,  YIGWON KIM ,  SUNGSIK PARK ,  JONGSU KIM ,  YOUNGSIK PARK ,  JINSEONG LEE ,  HYEKYOUNG JUE

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54426

Abstract: A semiconductor device includes a substrate including an overlay key region and a plurality of key patterns on the overlay key region. The plurality of key patterns include first to seventh key patterns. The second to seventh key patterns are arranged to enclose the first key pattern in a clockwise direction and to have center points forming a hexagonal shape.

公开(公告)号：US20230400758A1

公开(公告)日：2023-12-14

申请号：US18317328

申请日：2023-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yigwon KIM ,  Sangjin KIM ,  Jihun LEE ,  Jinhee JANG ,  Jeonghyun KIM

IPC: G03F1/22

CPC classification number: G03F1/22

Abstract: An extreme ultraviolet (EUV) photomask may include a mask structure including a main region, a scribe lane region surrounding the main region, buffer regions outside the scribe lane region and apart from each other and each having a same first width, and a black border region outside the buffer regions. The buffer regions may include a first buffer region, a second buffer region, and a third buffer region. The black border region may include a first corner region, a second corner region, and a third corner region. The first corner region may contact the first buffer region and the second buffer region. The second corner region may contact the first buffer region, the third buffer region, and a side of the scribe lane region. The third corner region may contact the second buffer region and the third buffer region.