公开(公告)号：US20230260925A1

公开(公告)日：2023-08-17

申请号：US17962593

申请日：2022-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonghyun KIM ,  SANGJIN KIM ,  YIGWON KIM ,  SUNGSIK PARK ,  JONGSU KIM ,  YOUNGSIK PARK ,  JINSEONG LEE ,  HYEKYOUNG JUE

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54426

Abstract: A semiconductor device includes a substrate including an overlay key region and a plurality of key patterns on the overlay key region. The plurality of key patterns include first to seventh key patterns. The second to seventh key patterns are arranged to enclose the first key pattern in a clockwise direction and to have center points forming a hexagonal shape.