公开(公告)号：US20230352421A1

公开(公告)日：2023-11-02

申请号：US18094786

申请日：2023-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungsik PARK ,  Jeonghyun KIM ,  Jonghwa BAEK ,  Hyunju SONG ,  Bumjoon YOUN

IPC: H01L23/544 ,  H01L27/088

CPC classification number: H01L23/544 ,  H01L27/088 ,  H01L2223/54426 ,  H01L29/66439

Abstract: A semiconductor device includes a substrate including a key region, a dummy active pattern provided on the key region, a dummy channel pattern provided on the dummy active pattern, the dummy channel pattern including a first plurality of semiconductor patterns spaced apart from each other, an epitaxial pattern connected to the dummy channel pattern, and a first sub-key pattern provided on the dummy channel pattern. The first sub-key pattern encloses a top surface, a bottom surface, and side surfaces of each of the first plurality of semiconductor patterns.