公开(公告)号：US10424503B2

公开(公告)日：2019-09-24

申请号：US15885067

申请日：2018-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-sang Youn ,  Myung-geun Song ,  Ji-hoon Cha ,  Jae-jik Baek ,  Bo-un Yoon ,  Jeong-nam Han

IPC: H01L21/762 ,  H01L21/8234 ,  H01L29/06 ,  H01L27/088 ,  H01L21/84 ,  H01L21/265 ,  H01L21/763

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.

公开(公告)号：US09305825B2

公开(公告)日：2016-04-05

申请号：US14175212

申请日：2014-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-sang Youn ,  Myung-geun Song ,  Ji-hoon Cha ,  Jae-jik Baek ,  Bo-un Yoon ,  Jeong-nam Han

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/84

CPC classification number: H01L21/76229 ,  H01L21/2652 ,  H01L21/763 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/845 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0657

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.

Abstract translation: 一种制造半导体器件的方法包括：通过在衬底中形成以第一间距重复的多个第一器件隔离沟槽来形成多个鳍片，形成从第一器件隔离的顶表面突出的多个翅片型有源区域 通过在所述多个第一器件隔离沟槽中形成所述第一器件隔离层，通过蚀刻所述衬底和所述第一器件隔离层的一部分来形成以与所述第一间距不同的间距隔离沟槽的多个第二器件， 在所述多个第二器件隔离沟槽中的第二器件隔离层，以便形成彼此分离的多个鳍式有源区域组，其间具有第二器件隔离层。

公开(公告)号：US10090190B2

公开(公告)日：2018-10-02

申请号：US15637552

申请日：2017-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-sang Youn ,  Myung-Geun Song ,  Ji-hoon Cha ,  Jae-jik Baek ,  Bo-un Yoon ,  Jeong-nam Han

IPC: H01L21/762 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/763

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.

公开(公告)号：US20180174889A1

公开(公告)日：2018-06-21

申请号：US15885067

申请日：2018-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sang Youn ,  Myung-geun Song ,  Ji-hoon Cha ,  Jae-jik Baek ,  Bo-un Yoon ,  Jeong-nam Han

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/265 ,  H01L21/8234

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.

公开(公告)号：US20170301581A1

公开(公告)日：2017-10-19

申请号：US15637552

申请日：2017-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sang Youn ,  Myung-geun Song ,  Ji-hoon Cha ,  Jae-jik Baek ,  Bo-un Yoon ,  Jeong-nam Han

IPC: H01L21/762 ,  H01L21/8234 ,  H01L21/763 ,  H01L21/265

CPC classification number: H01L21/76229 ,  H01L21/2652 ,  H01L21/763 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/845 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0657

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.

公开(公告)号：US09754806B2

公开(公告)日：2017-09-05

申请号：US14580513

申请日：2014-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-San Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67017 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32816 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67276 ,  Y10T137/2931 ,  Y10T137/4673

Abstract: Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.