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公开(公告)号：US20210328127A1
公开(公告)日：2021-10-21
申请号：US17227661
申请日：2021-04-12
Applicant: Samsung Electronics Co., Ltd
Inventor： Hyeokshin KWON , Jaehyeong LEE , Insu JEON
Abstract: Provided is a quantum computing device and system. The quantum computing device includes a first qubit chip, a readout cavity structure surrounding a first end part of the first qubit chip, and a storage cavity structure surrounding a second end part of the first qubit chip, wherein the first qubit chip includes a first readout antenna disposed within the readout cavity structure, a first storage antenna disposed in the storage cavity structure, and a first qubit element provided between the first readout antenna and the first storage antenna, and wherein the first qubit element is disposed between the readout cavity structure and the storage cavity structure.
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公开(公告)号：US20240260483A1
公开(公告)日：2024-08-01
申请号：US18507672
申请日：2023-11-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Daeseok HAN , Jaehyeong LEE , Jinhyoun KANG , Daeyun KIM , Jaeho SHIN , Daeho YANG
CPC classification number: H10N60/124 , H10N60/0941 , H10N60/805
Abstract: A device including a Josephson junction device including a first superconductor layer, a first oxide layer disposed on a first upper surface of the first superconductor layer, a second superconductor layer disposed to partially overlap the first superconductor layer, a second oxide layer disposed on a second upper surface of the second superconductor layer, and a third superconductor layer including a first portion facing the first upper surface of the first superconductor layer and a second portion facing the second upper surface of the second superconductor layer, and a first thickness of a first portion of the first oxide layer between a lower surface of the first portion of the third superconductor layer and a third upper surface of the first superconductor layer is less than a second thickness of a second portion of the first oxide layer.
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公开(公告)号：US20230004849A1
公开(公告)日：2023-01-05
申请号：US17683797
申请日：2022-03-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehwan JANG , Jinhyoun KANG , Hyeokshin KWON , Jaeho SHIN , Jaehyeong LEE , Insu JEON , Sungho HAN
IPC: G06N10/40
Abstract: An active circulator includes: an active filter; and a power divider serially connected to the active filter, wherein three or more combinations of the active filter and the power divider are connected to form a loop.
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公开(公告)号：US20220149501A1
公开(公告)日：2022-05-12
申请号：US17515055
申请日：2021-10-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaehyeong LEE , Hyeokshin KWON , Jaeho SHIN , Taehwan JANG , Insu JEON
Abstract: A qubit memory of a quantum computer is provided. The qubit memory according to an embodiment includes a first readout unit, a first transmon, and a first data storage unit storing quantum information, and the first data storage unit includes a first superconducting waveguide layer, an insulating layer, and a superconductor layer sequentially stacked on a substrate. In one example, the first superconducting waveguide layer may include a superconducting resonator.
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Patent Agency Ranking
公开(公告)号：US20210216899A1
公开(公告)日：2021-07-15
申请号：US16916832
申请日：2020-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaehyeong LEE , Hyeokshin KWON , Insu JEON
Abstract: Provided is a three-dimensional (3D) transmon qubit apparatus including a body portion, a driver, a transmon element disposed in an internal space of the body portion, a first tunable cavity module disposed in the internal space of the body, and comprising a first superconductive metal panel; and a second tunable cavity module disposed in the internal space of the body, and comprising a second superconductive metal panel, wherein the transmon element is disposed between the first superconductive metal panel and the second superconductive metal panel; wherein the first tunable cavity module and the second tunable cavity module are configured to adjust a distance between the first superconductive metal panel and the second superconductive metal panel, and wherein the driver is configured to tune a resonance frequency by adjusting a 3D cavity by adjusting the distance between the first superconductive metal panel and the second superconductive metal panel.
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公开(公告)号：US20240260487A1
公开(公告)日：2024-08-01
申请号：US18488645
申请日：2023-10-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaehyeong LEE , Jinhyoun KANG , Insu JEON , Jaeho SHIN
IPC: H10N69/00
CPC classification number: H10N69/00
Abstract: A qubit chip device includes: a substrate; a superconducting qubit on the substrate; and a readout circuit on the substrate and electrically connected to the superconducting qubit, the readout circuit including: a signal line on a surface of the substrate; a ground plate on the surface of the substrate, the ground plate including a pattern forming a coplanar waveguide along the signal line and offset from the signal line; and a conductive bridge embedded in the substrate and connecting two portions of the ground plate in a direction crossing the signal line.
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公开(公告)号：US20240237558A9
公开(公告)日：2024-07-11
申请号：US18194539
申请日：2023-03-31
Inventor： Jaehyeong LEE , Gilho LEE , Jinhyoun KANG , Jaeho SHIN , Seunghan LEE , Daeseok HAN
IPC: H10N69/00
CPC classification number: H10N69/00
Abstract: A superconducting quantum interferometric device (SQUID) includes: a conductive material region formed on a partial region of a substrate; a first superconducting material layer including a first loop including first and second extension units that are spaced apart from each other to form a proximity Josephson junction and that form a stack structure with the conductive material region; a second superconducting material layer including a second loop including first and second end units spaced apart from each other; and a tunnel Josephson junction formed by a stack structure including a tunnel thin film layer forming and the first and second end units, wherein at least a portion of the second loop forms a stack structure with the first loop.
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公开(公告)号：US20240138271A1
公开(公告)日：2024-04-25
申请号：US18194539
申请日：2023-03-30
Inventor： Jaehyeong LEE , Gilho LEE , Jinhyoun KANG , Jaeho SHIN , Seunghan LEE , Daeseok HAN
IPC: H10N69/00
CPC classification number: H10N69/00
Abstract: A superconducting quantum interferometric device (SQUID) includes: a conductive material region formed on a partial region of a substrate; a first superconducting material layer including a first loop including first and second extension units that are spaced apart from each other to form a proximity Josephson junction and that form a stack structure with the conductive material region; a second superconducting material layer including a second loop including first and second end units spaced apart from each other; and a tunnel Josephson junction formed by a stack structure including a tunnel thin film layer forming and the first and second end units, wherein at least a portion of the second loop forms a stack structure with the first loop.
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公开(公告)号：US20210217946A1
公开(公告)日：2021-07-15
申请号：US17015512
申请日：2020-09-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaehyeong LEE , Hyeokshin KWON
Abstract: A Josephson junction device includes a planar arrangement including a first two-dimensional (2D) material layer, a graphene layer, and a second 2D material layer planarly arranged on a device substrate, the first 2D material layer including at least one layer of a 2D material, the graphene layer forming a first junction with the first 2D material layer, and the second 2D material layer forming a second junction with the graphene layer and including at least one layer of a 2D material. A distance between the first junction and the second junction is within a range configured to cause a Josephson effect.
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