公开(公告)号：US20230335492A1

公开(公告)日：2023-10-19

申请号：US18153550

申请日：2023-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Ho Do ,  Ji Su Yu ,  Jae Ha Lee

IPC: H01L23/528 ,  H01L23/48 ,  H01L27/092 ,  H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L23/5286 ,  H01L23/481 ,  H01L27/0924 ,  H01L27/0928 ,  H01L29/41791 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/775

Abstract: According to some embodiments of the present disclosure, a semiconductor device includes a first power rail configured to provide a first voltage and extending in a first direction, a substrate comprising a first well having a first conductivity type and a second well having a second conductivity type, a first well tap having the first conductivity type, on the first well; a first source/drain region having the second conductivity type, on the first well; a first source/drain contact extending in a second direction and electrically connected to the first power rail, on the first source/drain region, a first connection wiring electrically connected to the first source/drain contact and extending in the first direction, and a first well contact electrically connected to the first connection wiring, on the first well tap.