公开(公告)号：US20220375962A1

公开(公告)日：2022-11-24

申请号：US17576279

申请日：2022-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjae JEONG ,  JUNGHO DO ,  JAE-WOO SEO ,  JISU YU ,  HYEONGYU YOU

IPC: H01L27/118 ,  H01L27/02 ,  H01L21/768 ,  G03F1/36 ,  G06F30/398

Abstract: A semiconductor device may include a substrate including a first logic cell and a second logic cell, which are adjacent to each other in a first direction and shares a cell border, a first metal layer on the substrate, the first metal layer including a power line, which is disposed on the cell border to extend in a second direction crossing the first direction and has a center line parallel to the second direction, and a second metal layer on the first metal layer. The second metal layer may include a first upper interconnection line and a second upper interconnection line, which are provided on each of the first and second logic cells. The first upper interconnection line may extend along a first interconnection track and the first direction. The second upper interconnection line may extend along a second interconnection track and in the first direction.

公开(公告)号：US20240250001A1

公开(公告)日：2024-07-25

申请号：US18532186

申请日：2023-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HOYOUNG TANG ,  TAE-HYUNG KIM ,  JUNGHO DO

IPC: H01L23/48 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/481 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/7869

Abstract: A semiconductor device including: first and second transistors on a substrate; an isolation transistor provided between the first and second transistors; a lower power line in a lower portion of the substrate; and a back-side gate contact penetrating the substrate and connected to the lower power line and a dummy gate electrode of the isolation transistor.