公开(公告)号：US20230223451A1

公开(公告)日：2023-07-13

申请号：US18073682

申请日：2022-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Seonbae KIM ,  Jinyoung PARK ,  Hyunho PARK ,  Jimin YU ,  Jaeran JANG

IPC: H01L29/417 ,  H01L23/528 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L23/5286 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/401 ,  H01L29/66439

Abstract: A semiconductor device includes an active region extending in a first direction; a device isolation layer on side surfaces of the active region and defining the active region; a gate structure intersecting the active region on the active region and extending in a second direction; source/drain regions in regions in which the active region is recessed, on both sides of the gate structure; first protective layers between the device isolation layer and the gate structure; and a buried interconnection line below the source/drain regions and connected to one of the source/drain regions through an upper surface of the buried interconnection line.

公开(公告)号：US20220384591A1

公开(公告)日：2022-12-01

申请号：US17546213

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Seon-Bae KIM ,  Minchan GWAK ,  Jinyoung PARK ,  Hyunho PARK

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern, a gate electrode on the channel pattern, an active contact on the source/drain pattern, a first lower interconnection line on the gate electrode, and a second lower interconnection line on the active contact and at the same level as the first lower interconnection line. The gate electrode may include an electrode body portion and an electrode protruding portion, wherein the electrode protruding portion protrudes from a top surface of the electrode body portion and is in contact with the first lower interconnection line thereon. The active contact may include a contact body portion and a contact protruding portion, wherein the contact protruding portion protrudes from a top surface of the contact body portion and is in contact with the second lower interconnection line thereon.

公开(公告)号：US20230115743A1

公开(公告)日：2023-04-13

申请号：US17834987

申请日：2022-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Hyunho PARK ,  Minchan GWAK ,  Seon-Bae KIM ,  Jinyoung PARK

IPC: H01L29/786 ,  H01L29/423

Abstract: A semiconductor device may include first and second active regions on a substrate, first and second active patterns on the first and second active regions, first and second source/drain patterns on the first and second active patterns, first and second silicide patterns on the first and second source/drain patterns, and first and second active contacts coupled to the first and second source/drain patterns. A lowermost portion of the first active contact is at a level higher than that of a lowermost portion of the second active contact. A thickness of the first silicide pattern is greater than that of the second silicide pattern.

公开(公告)号：US20230047343A1

公开(公告)日：2023-02-16

申请号：US17734473

申请日：2022-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Minchan GWAK ,  Seonbae KIM ,  Jinyoung PARK ,  Hyunho PARK

IPC: H01L23/535 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device includes active regions extending in a first direction on a substrate; a gate electrode intersecting the active regions on the substrate, extending in a second direction, and including a contact region protruding upwardly; and an interconnection line on the gate electrode and connected to the contact region, wherein the contact region includes a lower region having a first width in the second direction and an upper region located on the lower region and having a second width smaller than the first width in the second direction, and wherein at least one side surface of the contact region in the second direction has a point at which an inclination or a curvature is changed between the lower region and the upper region.

公开(公告)号：US20130215295A1

公开(公告)日：2013-08-22

申请号：US13766183

申请日：2013-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun BAEK ,  Sungwook AN ,  Sungkoo LEE ,  Hyunho PARK

IPC: H04N5/232

CPC classification number: H04N5/23293 ,  H04N1/2112 ,  H04N5/23296

Abstract: A method of processing an image of a portable terminal, the portable terminal comprising an image signal processor (ISP) and an application processor (AP) includes: acquiring, at the ISP, an image from a camera unit of the portable terminal for each frame of a plurality of frames during an operation of the camera; generating, at the ISP, a display image and a compression image by processing the acquired image; transmitting the display image generated by the ISP for each frame and the compression image at a preset frame interval; and displaying, at the AP, the acquired display image and buffering, at the AP, the compression image.

Abstract translation: 一种处理便携式终端的图像的方法，包括图像信号处理器（ISP）和应用处理器（AP）的便携式终端包括：在ISP处从每个帧的便携式终端的相机单元获取图像 在相机的操作期间的多个帧; 通过处理获取的图像在ISP生成显示图像和压缩图像; 以预定的帧间隔发送由ISP针对每个帧生成的显示图像和压缩图像; 并且在AP处显示所获取的显示图像并在AP处缓冲压缩图像。

公开(公告)号：US20220406888A1

公开(公告)日：2022-12-22

申请号：US17574074

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Seonbae KIM ,  Sungmin KIM ,  Jinyoung PARK ,  Hyunho PARK

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device is provided. The semiconductor device includes: an active pattern provided on a substrate having an upper surface; an insulation pattern provided above the substrate and contacting an upper surface of the active pattern; channels spaced apart from each other along a direction perpendicular to the upper surface of the substrate, each of the channels including a material provided in the active pattern; and a gate structure contacting an upper surface of the insulation pattern, an upper surface of the channels, a lower surface of the channels, and sidewalls of the channels opposite to each other. A first distance between an upper surface of the active pattern and a lowermost one of the channels is greater than a second distance between an upper surface of one of the channels and a lower surface of an adjacent channel.

公开(公告)号：US20140325554A1

公开(公告)日：2014-10-30

申请号：US14264184

申请日：2014-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangmi PARK ,  Hyunho PARK ,  Jupyo HONG

IPC: H04N21/258 ,  H04N21/4405 ,  H04N21/266 ,  H04N21/6334 ,  H04N21/835 ,  H04N21/435 ,  H04N21/4408

CPC classification number: H04N21/25816 ,  G06F21/10 ,  H04L63/061 ,  H04L63/10 ,  H04N21/26613 ,  H04N21/4353 ,  H04N21/4405 ,  H04N21/4408 ,  H04N21/6334 ,  H04N21/835

Abstract: Disclosed herein are a method and device for transmitting digital content. A selection of at least one device authorized to receive digital content is detected. It is identified whether each selected device contains a session key that corresponds to a local session key. Digital content is transmitted to each device whose session key corresponds to the local key. Digital content is prevented from transmission to unselected devices not having a corresponding session key.

Abstract translation: 这里公开了用于发送数字内容的方法和装置。 检测到被授权接收数字内容的至少一个设备的选择。 识别每个所选设备是否包含与本地会话密钥对应的会话密钥。 数字内容被发送到会话密钥对应于本地密钥的每个设备。 防止数字内容传送到不具有相应会话密钥的未选择的设备。

公开(公告)号：US20130208165A1

公开(公告)日：2013-08-15

申请号：US13763789

申请日：2013-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungwook AN ,  Myoungwon KIM ,  Soojin KIM ,  Hyunho PARK ,  Woohyun BAEK ,  Sungkoo LEE ,  Haesun LEE ,  Minkeun CHO

IPC: H04N5/232

CPC classification number: H04N5/23293 ,  H04N5/232

Abstract: An image-taking method of a portable terminal apparatus includes acquiring images from a camera sensor at every frame period in a camera operation mode; converting the acquired images to viewing images and compressed images; and buffering the compressed images while displaying the viewing images on a display unit of the portable terminal.

Abstract translation: 便携式终端装置的拍摄方法包括：在相机操作模式中，每帧周期从相机传感器获取图像; 将获取的图像转换成观看图像和压缩图像; 并且在便携式终端的显示单元上显示观看图像的同时缓冲压缩图像。

公开(公告)号：US20130222640A1

公开(公告)日：2013-08-29

申请号：US13775459

申请日：2013-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun BAEK ,  Kwangju LEE ,  Seungjoo CHOE ,  Hyunho PARK

IPC: H04N5/232

CPC classification number: H04N5/23293 ,  G11B27/034 ,  G11B27/105 ,  G11B27/28 ,  G11B27/3027 ,  G11B27/34 ,  H04N5/9201 ,  H04N9/8042

Abstract: An apparatus and method generate and store metadata in a moving image shooting mode for use in playing and editing the moving image. The moving image processing method of the apparatus equipped with a camera includes acquiring images at every frame period in a moving image shooting mode; generating metadata of the images; encoding the images into the moving image; storing the moving image with the metadata; and displaying a specific metadata selected among the metadata as supplementary functions of the moving image in a moving image playback mode.

Abstract translation: 一种装置和方法，生成并存储用于播放和编辑运动图像的运动图像拍摄模式中的元数据。 配备有照相机的装置的运动图像处理方法包括：在运动图像拍摄模式中每帧周期获取图像; 生成图像的元数据; 将图像编码成运动图像; 存储具有元数据的运动图像; 以及在所述元数据中选择的特定元数据作为所述运动图像的运动图像再现模式的补充功能。

公开(公告)号：US20250107150A1

公开(公告)日：2025-03-27

申请号：US18650292

申请日：2024-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daesik KIM ,  Seonbae KIM ,  Taeyong KWON ,  Changhee KIM ,  Doohyun LEE ,  Jaehyun KANG ,  Jinyoung PARK ,  Hyunho PARK ,  Jimin YU ,  Jinwook LEE ,  Seunghyun HWANG

IPC: H01L29/417 ,  H01L21/285 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device includes a substrate including an active region, a gate structure on the substrate, a plurality of channel layers on the active region, spaced apart from each other and surrounded by the gate structure, a source/drain region in a region at which the active region is recessed, on at least one side of the gate structure, and connected to the channel layers, and a contact plug partially recessing the source/drain region from an upper surface of the source/drain region, electrically connected to the source/drain region, and including a metal-semiconductor compound layer along a recessed surface of the source/drain region and a contact conductor layer on the metal-semiconductor compound layer, wherein the metal-semiconductor compound layer has a first thickness on a side surface of the contact conductive layer and a second thickness on a bottom surface of the contact plug, the second thickness being smaller than the first thickness.