公开(公告)号：US20230209813A1

公开(公告)日：2023-06-29

申请号：US17961688

申请日：2022-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuna LEE ,  Sangwuk PARK ,  Hyunchul YOON ,  Minji LEE ,  Jungpyo HONG

IPC: H01L27/108 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L27/10888 ,  H01L27/10885 ,  H01L23/5283 ,  H01L23/5226 ,  H01L27/10823 ,  H01L27/10897 ,  H01L27/10876 ,  H01L27/10894

Abstract: A method of fabricating a semiconductor device includes forming interconnection structures on a lower structure. An insulating layer is formed between the interconnection structures. The insulating layer is patterned to form insulating patterns. An insulating fence is formed between the insulating patterns. A first protective pattern is formed on the insulating fence. The insulating patterns are etched after the forming of the first protective pattern to form contact holes. Contact plugs are formed in the contact holes.

公开(公告)号：US20210098260A1

公开(公告)日：2021-04-01

申请号：US16858591

申请日：2020-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul YOON ,  Mincheol KWAK ,  Joonghee KIM ,  Jihee KIM ,  Yeongshin PARK ,  Jungheun HWANG

IPC: H01L21/308

Abstract: In order to manufacture an integrated circuit device, a feature layer is formed on a substrate in a first area for forming a plurality of chips and in a second area surrounding the first area. The feature layer has a step difference in the second area. On the feature layer, a hard mask structure including a plurality of hard mask layers stacked on each other is formed. In the first area and the second area, a protective layer covering the hard mask structure is formed. On the protective layer, a photoresist layer is formed. A photoresist pattern is formed by exposing and developing the photoresist layer in the first area by using the step difference in the second area as an alignment key.