公开(公告)号：US20210098260A1

公开(公告)日：2021-04-01

申请号：US16858591

申请日：2020-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul YOON ,  Mincheol KWAK ,  Joonghee KIM ,  Jihee KIM ,  Yeongshin PARK ,  Jungheun HWANG

IPC: H01L21/308

Abstract: In order to manufacture an integrated circuit device, a feature layer is formed on a substrate in a first area for forming a plurality of chips and in a second area surrounding the first area. The feature layer has a step difference in the second area. On the feature layer, a hard mask structure including a plurality of hard mask layers stacked on each other is formed. In the first area and the second area, a protective layer covering the hard mask structure is formed. On the protective layer, a photoresist layer is formed. A photoresist pattern is formed by exposing and developing the photoresist layer in the first area by using the step difference in the second area as an alignment key.