公开(公告)号：US20230209813A1

公开(公告)日：2023-06-29

申请号：US17961688

申请日：2022-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuna LEE ,  Sangwuk PARK ,  Hyunchul YOON ,  Minji LEE ,  Jungpyo HONG

IPC: H01L27/108 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L27/10888 ,  H01L27/10885 ,  H01L23/5283 ,  H01L23/5226 ,  H01L27/10823 ,  H01L27/10897 ,  H01L27/10876 ,  H01L27/10894

Abstract: A method of fabricating a semiconductor device includes forming interconnection structures on a lower structure. An insulating layer is formed between the interconnection structures. The insulating layer is patterned to form insulating patterns. An insulating fence is formed between the insulating patterns. A first protective pattern is formed on the insulating fence. The insulating patterns are etched after the forming of the first protective pattern to form contact holes. Contact plugs are formed in the contact holes.