公开(公告)号：US09589625B2

公开(公告)日：2017-03-07

申请号：US14742821

申请日：2015-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Ki Kim ,  Hyung-Sik You

IPC: G11C11/24 ,  G11C7/00 ,  G11C11/4074 ,  G11C11/406 ,  G11C11/4091 ,  G11C7/06 ,  G11C7/08 ,  G11C11/4094

CPC classification number: G11C11/4074 ,  G11C7/065 ,  G11C7/08 ,  G11C11/406 ,  G11C11/40611 ,  G11C11/4091 ,  G11C11/4094 ,  G11C2211/4065 ,  G11C2211/4068

Abstract: A method of operating a memory device may include: providing a first power supply voltage to a sense amplifier during a first time interval, the first time interval being between a first time at which a voltage is provided to a first bit line, and a second time at which a pre-charge command is received; and providing a second power supply voltage to the sense amplifier during a second time interval, during which the word line is enabled after the pre-charge command is received. The second power supply voltage may be greater than the first power supply voltage.

Abstract translation: 操作存储器件的方法可以包括：在第一时间间隔期间向感测放大器提供第一电源电压，第一时间间隔在提供电压到第一位线的第一时间和第二时间间隔之间 接收预充电命令的时间; 以及在第二时间间隔期间向读出放大器提供第二电源电压，在此期间，在接收到预充电命令之后，字线被使能。 第二电源电压可以大于第一电源电压。

公开(公告)号：US09111633B2

公开(公告)日：2015-08-18

申请号：US14198874

申请日：2014-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Ki Kim

IPC: G11C8/08 ,  G11C11/408 ,  G11C7/02 ,  G11C8/14 ,  G11C29/02 ,  G11C11/406 ,  G11C8/00 ,  G11C29/12

CPC classification number: G11C11/4085 ,  G11C7/02 ,  G11C8/00 ,  G11C8/08 ,  G11C8/14 ,  G11C11/406 ,  G11C29/021 ,  G11C29/025 ,  G11C29/028 ,  G11C2029/1202

Abstract: A semiconductor memory device may include a memory cell array, a plurality of first sub word line drivers, and a plurality of second sub word line drivers. The memory cell array may comprise a plurality of sub cell arrays, a plurality of first word lines and a plurality of second word lines, wherein a loading of each of the first word lines is greater than a loading of each of the second word lines. Each of the plurality of first sub word line drivers may be connected to drive a corresponding one of the plurality of first word lines, wherein each of the first sub word line drivers has a first driving capability. Each of the plurality of second sub word line drivers may be connected to drive a corresponding one of the plurality of second word lines, wherein each of the second sub word line drivers has a second driving capability different from the first driving capability.

Abstract translation: 半导体存储器件可以包括存储单元阵列，多个第一子字线驱动器和多个第二子字线驱动器。 存储单元阵列可以包括多个子单元阵列，多个第一字线和多个第二字线，其中每个第一字线的负载大于每个第二字线的负载。 多个第一子字线驱动器中的每一个可以被连接以驱动多个第一字线中的相应一个，其中每个第一子字线驱动器具有第一驱动能力。 多个第二子字线驱动器中的每一个可以被连接以驱动多个第二字线中的相应一个，其中每个第二子字线驱动器具有与第一驱动能力不同的第二驱动能力。