公开(公告)号：US20160079395A1

公开(公告)日：2016-03-17

申请号：US14699091

申请日：2015-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Jun SIM ,  Jae-Young PARK ,  Sun-Young LEE

IPC: H01L29/66 ,  H01L29/51 ,  H01L21/28 ,  H01L21/306 ,  H01L21/762

CPC classification number: H01L29/66795 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/2686 ,  H01L21/28185 ,  H01L21/30604 ,  H01L21/76224 ,  H01L29/165 ,  H01L29/51 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: In a method of manufacturing a semiconductor device, a preliminary gate insulation layer is formed on a substrate, and at least a portion of the substrate serves as a channel region. A hydrogen plasma treatment is performed on the preliminary gate insulation layer to form a gate insulation layer, and the hydrogen plasma treatment supplying a hydrogen-containing gas and an inert gas supply in a chamber via different gas supply parts to form a hydrogen plasma region and an inert gas plasma region in the chamber, respectively. A gate electrode is formed on the gate insulation layer, and impurity regions are formed at upper portions of the substrate adjacent to the gate electrode.

Abstract translation: 在半导体装置的制造方法中，在基板上形成预备栅极绝缘层，并且至少一部分基板作为沟道区域。 在预备栅极绝缘层上进行氢等离子体处理以形成栅极绝缘层，并且氢等离子体处理通过不同的气体供应部分在室中提供含氢气体和惰性气体源，以形成氢等离子体区域， 室内的惰性气体等离子体区域。 栅电极形成在栅极绝缘层上，杂质区形成在与栅电极相邻的衬底的上部。