公开(公告)号：US10298782B2

公开(公告)日：2019-05-21

申请号：US15388104

申请日：2016-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungsoon Kim ,  Yongchan Keh ,  Hyowon Kim ,  Byeonghoon Park ,  Kisuk Sung ,  Jungkee Lee ,  Kihuk Lee ,  Changryong Heo

IPC: H04N5/235 ,  H04N1/00 ,  H04L29/06 ,  H04L29/08 ,  H04N5/04 ,  H04N5/232 ,  H04L7/00 ,  H04L12/26

Abstract: An electronic device and data processing method thereof is provided. The electronic device of the present disclosure includes a first processor which acquires image data from a camera and generates a data frame based on the image data and a second processor which receives the data frame from the first processor, checks attribute information of the data frame, and supplies information on the data frame to at least one of a plurality of applications corresponding to the attribute information.

公开(公告)号：US10224405B2

公开(公告)日：2019-03-05

申请号：US15371387

申请日：2016-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyowon Kim

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  B82Y40/00 ,  H01L29/778 ,  C01B32/186 ,  C01B32/194 ,  B82Y30/00 ,  H01L29/167

Abstract: A multilayer graphene, a method of forming the same, a device including the multilayer graphene, and a method of manufacturing the device are provided. In the method of forming the multilayer graphene, a first graphene is formed on an underlayer, and then a multilayer graphene is formed by exposing two adjacent areas on the first graphene to a source gas. By differentiating temperatures and source gasses, the multilayer graphene has different electrical characteristics in the two adjacent areas.

公开(公告)号：US09660036B2

公开(公告)日：2017-05-23

申请号：US14928026

申请日：2015-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyowon Kim ,  Jaeho Lee

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/66 ,  C01B31/04 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L29/1606 ,  C01B32/186 ,  C01B2204/02 ,  C01B2204/22 ,  C01B2204/30 ,  H01L21/02527 ,  H01L21/02573 ,  H01L21/02645 ,  H01L29/6603 ,  H01L51/0045 ,  H01L51/0558 ,  Y02E10/549

Abstract: A graphene layer, a method of forming the graphene layer, a device including the graphene layer, and a method of manufacturing the device are provided. The method of forming the graphene layer may include forming a first graphene at a first temperature using a first source gas and forming a second graphene at a second temperature using a second source gas. One of the first and second graphenes may be a P-type graphene, and the other one of the first and second graphenes may be an N-type graphene. The first graphene and the second graphene together form a P—N junction.

公开(公告)号：US20230012513A1

公开(公告)日：2023-01-19

申请号：US17862675

申请日：2022-07-12

Applicant: SAMSUNG ELECTRONICS CO.,LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUDATION, YONSEI UNIVERSITY

Inventor： Jiyeon Ku ,  Hyowon Kim ,  Wonjun Jang ,  Heeyoon Noh

IPC: H01L45/00 ,  H01L27/24

Abstract: Provided is a memory device and an electronic device including the same. The memory device according to an example embodiment may include: a two-dimensional material layer including a two-dimensional material; a contact region in contact with an edge of the two-dimensional material layer; and an electrode which is electrically connected to the contact region and changes a domain of a region adjacent to the contact region of the two-dimensional material layer by an applied voltage.

公开(公告)号：US09825182B2

公开(公告)日：2017-11-21

申请号：US15051270

申请日：2016-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insu Jeon ,  Jiyeon Ku ,  Hyowon Kim

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/16 ,  H01L29/66 ,  H01L21/04 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02527 ,  H01L21/02664 ,  H01L21/044 ,  H01L29/1606 ,  H01L29/66045

Abstract: A method includes growing a graphene layer on a metal layer, intercalating a first material between the metal layer and the graphene layer by heating the first material at a first pressure and a first temperature, and intercalating a second material between the metal layer and the graphene layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature. Accordingly, the first material and the second material are chemically bonded to each other to form an insulating layer, and the insulating layer may be between the metal layer and the graphene layer.

公开(公告)号：US11078082B2

公开(公告)日：2021-08-03

申请号：US16267491

申请日：2019-02-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiyeon Ku ,  Wonhee Ko ,  Hyowon Kim

IPC: C23C16/26 ,  C23C16/455 ,  C01B32/194 ,  H01L21/02

Abstract: Example embodiments relate to a method of manufacturing graphene structures having nanobubbles. The graphene structure includes a graphene layer on a substrate, the graphene layer having a plurality of convex portions and a band gap that is due to the plurality of convex portions. The method includes preparing the graphene layer on the substrate, and forming the plurality of convex portions on the graphene layer by irradiating a noble gas onto the graphene layer.

公开(公告)号：US10312100B2

公开(公告)日：2019-06-04

申请号：US15334684

申请日：2016-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wonhee Ko ,  Hyowon Kim ,  Jiyeon Ku ,  Donggyu Kim ,  Seunghwa Ryu ,  Seongjun Jeong

IPC: H01L21/20 ,  H01L21/306 ,  H01L21/02 ,  H01L21/308 ,  H01L29/41

Abstract: A conductor including a graphene layer and a method of manufacturing the conductor are provided. The conductor may further include a nano pattern disposed on a substrate, and the graphene layer may be formed on the nano pattern. The nano pattern may have any various shapes and include a material that interacts with the graphene layer. The nano pattern and the graphene layer included in the conductor may interact with each other, such that the electric characteristics of the conductor are maintained while the heat transfer characteristics thereof are improved.