公开(公告)号：US20190043809A1

公开(公告)日：2019-02-07

申请号：US15909390

申请日：2018-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonhee KANG ,  Jiyoung Kim ,  Taejin Yim ,  Jongmin Baek ,  Sanghoon Ahn ,  Hyeoksang Oh ,  Kyu-Hee Han

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/5329

Abstract: Embodiments of the present inventive concepts provide methods of forming an ultra-low-k dielectric layer and the ultra-low-k dielectric layer formed thereby. The method may include forming a first layer by supplying a precursor including silicon, oxygen, carbon, and hydrogen, performing a first ultraviolet process on the first layer to convert the first layer into a second layer, and performing a second ultraviolet process on the second layer under a process condition different from that of the first ultraviolet process.

公开(公告)号：US10446495B2

公开(公告)日：2019-10-15

申请号：US15909390

申请日：2018-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonhee Kang ,  Jiyoung Kim ,  Taejin Yim ,  Jongmin Baek ,  Sanghoon Ahn ,  Hyeoksang Oh ,  Kyu-Hee Han

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02

Abstract: Embodiments of the present inventive concepts provide methods of forming an ultra-low-k dielectric layer and the ultra-low-k dielectric layer formed thereby. The method may include forming a first layer by supplying a precursor including silicon, oxygen, carbon, and hydrogen, performing a first ultraviolet process on the first layer to convert the first layer into a second layer, and performing a second ultraviolet process on the second layer under a process condition different from that of the first ultraviolet process.

公开(公告)号：US09953827B2

公开(公告)日：2018-04-24

申请号：US15273797

申请日：2016-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woochoel Noh ,  Wonkyu Han ,  Hyeoksang Oh ,  Naein Lee ,  Gyeongyun Han

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/02068 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/76814 ,  H01L21/76825

Abstract: A method of fabricating a semiconductor device including an interlayer insulating layer and interconnections is provided. An interlayer insulating layer is formed on a substrate. An opening is formed in the interlayer insulating layer. A degassing process is performed by irradiating the interlayer insulating layer having the opening with microwaves. A K-value recovery process is performed by irradiating the interlayer insulating layer having the opening with UV light. A conductive layer is formed in the opening. The degassing process and the K-value recovery process are performed as an in-situ process.