公开(公告)号：US20240304623A1

公开(公告)日：2024-09-12

申请号：US18472777

申请日：2023-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hanyoung SONG ,  Jiwon PARK ,  Minseok JO

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L27/092 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/0684 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: An integrated circuit device includes a first fin-type active region and a second fin-type active region extending in a first lateral direction on a substrate, a first gate line extending in a second lateral direction intersecting the first lateral direction on the first fin-type active region, a second gate line apart from the first gate line in the second lateral direction on the second fin-type active region and extending along an extension line of the first gate line in the second lateral direction, and a gate cut insulating pattern between the first gate line and the second gate line, wherein, for at least one of the first gate line and the second gate line, a width of a terminal gate portion, which is adjacent to the gate cut insulating pattern, in the first lateral direction is less than a width of another portion in the first lateral direction.