公开(公告)号：US09831240B2

公开(公告)日：2017-11-28

申请号：US14167236

申请日：2014-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Yeop Park ,  Leonelli Daniele ,  Shigenobu Maeda ,  Han-Su Oh ,  Woong-Gi Kim ,  Jong-Hyuk Lee ,  Ju-Seob Jeong

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823431 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes a gate on a substrate, a gate insulating layer along a sidewall and a bottom surface of the gate, and an L-shaped spacer structure on both sidewalls of the gate. A structure extends the distance between the gate and source/drain regions to either side of the gate.