公开(公告)号：US20220037385A1

公开(公告)日：2022-02-03

申请号：US17218662

申请日：2021-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunyoung BANG ,  SEUNGJOO NAH ,  Hoemin JEONG ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor includes: a substrate having a first surface and a second surface that are opposite to each other; a plurality of color filters on the substrate; a fence pattern between adjacent color filters of the plurality of color filters; and a protective layer between the substrate and the plurality of color filters, wherein the protective layer covers the fence pattern. The fence pattern includes: a first fence pattern having a first bottom surface and a first top surface that are opposite to each other; and a second fence pattern on the first top surface of the first fence pattern. A width at the first bottom surface of the first fence pattern is less than a width of the second fence pattern, and the protective layer covers a sidewall of the first fence pattern.

公开(公告)号：US20210335862A1

公开(公告)日：2021-10-28

申请号：US17099880

申请日：2020-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： KANGHUN LEE ,  SEUNGJOO NAH ,  HEEGEUN JEONG ,  MANGEUN CHO

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a substrate that has a first surface and a second surface that face each other, an isolation pattern that defines a plurality of pixel regions in the substrate, a plurality of contact plugs on the first surface of the substrate and coupled to the isolation pattern, and a plurality of first micro-lens patterns on the second surface of the substrate. The contact plugs include a first contact plug and a second contact plug that neighbor each other. A portion of the isolation pattern extends to run across a first region and a second region in the substrate. The first region vertically overlaps the first contact plug. The second region vertically overlaps the second contact plug.

公开(公告)号：US20230005971A1

公开(公告)日：2023-01-05

申请号：US17693069

申请日：2022-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGMIN HAN ,  SEUNGJOO NAH ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor includes; a semiconductor substrate including a first surface and an opposing second surface, a pixel isolation structure in the semiconductor substrate and defining a pixel section, a photoelectric conversion region in the pixel section, a first device isolation layer on the pixel section and defining an active area on the first surface of the semiconductor substrate, a floating diffusion region in the active area and spaced apart from the photoelectric conversion region, a transfer gate electrode on the active area between the photoelectric conversion region and the floating diffusion region, and a second device isolation layer in the active area between the transfer gate electrode and the floating diffusion region.

公开(公告)号：US20230017156A1

公开(公告)日：2023-01-19

申请号：US17693076

申请日：2022-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-HOON KIM ,  JINJU JEON ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor may include a substrate including first and second surfaces opposite to each other and including a single crystalline layer, a first epitaxial layer, and a second epitaxial layer sequentially stacked from the second surface. The single crystalline layer and the second epitaxial layer may be doped with first impurities of a first conductivity type. The first epitaxial layer may be doped with second impurities of a second conductivity type. A pixel separation structure extends from the first surface to penetrate at least the second and first epitaxial layers and divides the substrate into a plurality of pixels. A transfer gate electrode extends from the first surface to penetrate the second epitaxial layer. A doping concentration of the first impurities doped in the single crystalline layer may be higher than that in the second epitaxial layer.

公开(公告)号：US20210193706A1

公开(公告)日：2021-06-24

申请号：US16934278

申请日：2020-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINYOUNG KIM ,  EUIYEOL KIM ,  HYOUNMIN BAEK ,  JEONG-HO LEE ,  YOUNGWOO CHUNG ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor includes; a substrate having a first surface and an opposing second surface and including unit pixels respectively having photoelectric conversion regions, a semiconductor pattern disposed in a first trench defining the unit pixels, the semiconductor pattern including a first semiconductor layer provided on an inner surface of the first trench and a second semiconductor layer provided on the first semiconductor layer, and a first contact provided on the second surface and connected to the semiconductor pattern. A height of the first semiconductor layer from a bottom surface of the first trench is less than a height of the second semiconductor layer from the bottom surface of the first trench.

公开(公告)号：US20230022805A1

公开(公告)日：2023-01-26

申请号：US17657010

申请日：2022-03-29

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： DONGMIN HAN ,  Wonhyeok KIM ,  SEONGJOO NAH ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.

公开(公告)号：US20200335536A1

公开(公告)日：2020-10-22

申请号：US16917309

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONCHUL CHOI ,  Min JANG ,  YITAE KIM ,  HEEGEUN JEONG

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.

公开(公告)号：US20180190692A1

公开(公告)日：2018-07-05

申请号：US15837497

申请日：2017-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONCHUL CHOI ,  Min JANG ,  YITAE KIM ,  HEEGEUN JEONG

IPC: H01L27/146 ,  H04N5/374

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.