公开(公告)号：US20230022805A1

公开(公告)日：2023-01-26

申请号：US17657010

申请日：2022-03-29

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： DONGMIN HAN ,  Wonhyeok KIM ,  SEONGJOO NAH ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.

公开(公告)号：US20230005971A1

公开(公告)日：2023-01-05

申请号：US17693069

申请日：2022-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGMIN HAN ,  SEUNGJOO NAH ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor includes; a semiconductor substrate including a first surface and an opposing second surface, a pixel isolation structure in the semiconductor substrate and defining a pixel section, a photoelectric conversion region in the pixel section, a first device isolation layer on the pixel section and defining an active area on the first surface of the semiconductor substrate, a floating diffusion region in the active area and spaced apart from the photoelectric conversion region, a transfer gate electrode on the active area between the photoelectric conversion region and the floating diffusion region, and a second device isolation layer in the active area between the transfer gate electrode and the floating diffusion region.