公开(公告)号：US20230017156A1

公开(公告)日：2023-01-19

申请号：US17693076

申请日：2022-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-HOON KIM ,  JINJU JEON ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor may include a substrate including first and second surfaces opposite to each other and including a single crystalline layer, a first epitaxial layer, and a second epitaxial layer sequentially stacked from the second surface. The single crystalline layer and the second epitaxial layer may be doped with first impurities of a first conductivity type. The first epitaxial layer may be doped with second impurities of a second conductivity type. A pixel separation structure extends from the first surface to penetrate at least the second and first epitaxial layers and divides the substrate into a plurality of pixels. A transfer gate electrode extends from the first surface to penetrate the second epitaxial layer. A doping concentration of the first impurities doped in the single crystalline layer may be higher than that in the second epitaxial layer.

公开(公告)号：US20210116529A1

公开(公告)日：2021-04-22

申请号：US17136074

申请日：2020-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUCK-HYUN NAM ,  MIN-SUNG KIL ,  HYOUNG-TAEK LIM ,  SANG-HOON KIM

IPC: G01R35/00 ,  G11C5/14 ,  H02J7/34 ,  G01R31/3835 ,  G01R27/32 ,  G01R1/28 ,  G01R27/28

Abstract: A method and apparatus are for monitoring a secondary power device and for accurately checking a state of the secondary power device, and an electronic system includes the apparatus. The method of monitoring a secondary power device includes setting a first reference parameter by using a voltage of at least one capacitor of the secondary power device, setting a second reference parameter by using the voltage of the at least one capacitor and the first reference parameter, and setting a reference level for checking of the state of the secondary power device by using the second reference parameter, wherein the reference level is used in checking of the state of the secondary power device.

公开(公告)号：US20200064430A1

公开(公告)日：2020-02-27

申请号：US16298753

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUCK-HYUN NAM ,  MIN-SUNG KIL ,  HYOUNG-TAEK LIM ,  SANG-HOON KIM

IPC: G01R35/00 ,  G11C5/14 ,  G01R31/3835 ,  H02J7/34

Abstract: A method and apparatus for monitoring a secondary power device, for accurately checking a state of the secondary power device, and an electronic system including the apparatus are provided. The method of monitoring a secondary power device includes: setting a first reference parameter by using a voltage of at least one capacitor of the secondary power device; setting a second reference parameter by using the voltage of the at least one capacitor and the first reference parameter; and setting a reference level for checking of the state of the secondary power device by using the second reference parameter, wherein the reference level is used in checking of the state of the secondary power device.