公开(公告)号：US20220037385A1

公开(公告)日：2022-02-03

申请号：US17218662

申请日：2021-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunyoung BANG ,  SEUNGJOO NAH ,  Hoemin JEONG ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor includes: a substrate having a first surface and a second surface that are opposite to each other; a plurality of color filters on the substrate; a fence pattern between adjacent color filters of the plurality of color filters; and a protective layer between the substrate and the plurality of color filters, wherein the protective layer covers the fence pattern. The fence pattern includes: a first fence pattern having a first bottom surface and a first top surface that are opposite to each other; and a second fence pattern on the first top surface of the first fence pattern. A width at the first bottom surface of the first fence pattern is less than a width of the second fence pattern, and the protective layer covers a sidewall of the first fence pattern.

公开(公告)号：US20170287969A1

公开(公告)日：2017-10-05

申请号：US15623635

申请日：2017-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNGJOO NAH ,  JUNG-CHAK AHN ,  KYUNG-HO LEE

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

公开(公告)号：US20210335862A1

公开(公告)日：2021-10-28

申请号：US17099880

申请日：2020-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： KANGHUN LEE ,  SEUNGJOO NAH ,  HEEGEUN JEONG ,  MANGEUN CHO

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a substrate that has a first surface and a second surface that face each other, an isolation pattern that defines a plurality of pixel regions in the substrate, a plurality of contact plugs on the first surface of the substrate and coupled to the isolation pattern, and a plurality of first micro-lens patterns on the second surface of the substrate. The contact plugs include a first contact plug and a second contact plug that neighbor each other. A portion of the isolation pattern extends to run across a first region and a second region in the substrate. The first region vertically overlaps the first contact plug. The second region vertically overlaps the second contact plug.

公开(公告)号：US20230005971A1

公开(公告)日：2023-01-05

申请号：US17693069

申请日：2022-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGMIN HAN ,  SEUNGJOO NAH ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor includes; a semiconductor substrate including a first surface and an opposing second surface, a pixel isolation structure in the semiconductor substrate and defining a pixel section, a photoelectric conversion region in the pixel section, a first device isolation layer on the pixel section and defining an active area on the first surface of the semiconductor substrate, a floating diffusion region in the active area and spaced apart from the photoelectric conversion region, a transfer gate electrode on the active area between the photoelectric conversion region and the floating diffusion region, and a second device isolation layer in the active area between the transfer gate electrode and the floating diffusion region.