公开(公告)号：US20210193706A1

公开(公告)日：2021-06-24

申请号：US16934278

申请日：2020-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINYOUNG KIM ,  EUIYEOL KIM ,  HYOUNMIN BAEK ,  JEONG-HO LEE ,  YOUNGWOO CHUNG ,  HEEGEUN JEONG

IPC: H01L27/146

Abstract: An image sensor includes; a substrate having a first surface and an opposing second surface and including unit pixels respectively having photoelectric conversion regions, a semiconductor pattern disposed in a first trench defining the unit pixels, the semiconductor pattern including a first semiconductor layer provided on an inner surface of the first trench and a second semiconductor layer provided on the first semiconductor layer, and a first contact provided on the second surface and connected to the semiconductor pattern. A height of the first semiconductor layer from a bottom surface of the first trench is less than a height of the second semiconductor layer from the bottom surface of the first trench.