公开(公告)号：US20180019135A1

公开(公告)日：2018-01-18

申请号：US15423027

申请日：2017-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Jae-soon LIM ,  Youn-joung CHO

IPC: H01L21/285 ,  H01L49/02 ,  H01L29/66

CPC classification number: H01L21/28556 ,  H01L27/11582 ,  H01L28/60 ,  H01L29/66795

Abstract: Provided are an aluminum compound represented by General Formula (I), a method of forming a thin film, and a method of fabricating an integrated circuit device.

公开(公告)号：US20170152277A1

公开(公告)日：2017-06-01

申请号：US15363088

申请日：2016-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  L'Air Liquide, Societe Anonyme Pour L'etude et L'exploitation des Procedes Georges Claude

Inventor： Jae-soon LIM ,  Gyu-hee PARK ,  Youn-joung CHO ,  Clement LANSALOT ,  Won-tae NOH ,  Julien LIEFFRIG ,  Joo-ho LEE

IPC: C07F17/00 ,  H01L21/28 ,  H01L21/02 ,  C09D5/24 ,  H01L29/49 ,  H01L29/51 ,  H01L49/02 ,  H01L27/108 ,  H01L21/285 ,  H01L29/66

CPC classification number: C07F17/00 ,  C09D5/24 ,  H01L21/02189 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/28568 ,  H01L27/1085 ,  H01L27/10855 ,  H01L27/10879 ,  H01L28/60 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795

Abstract: Disclosed herein is a method of forming a thin film. The method includes forming a niobium-containing film by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1): Nb(R5Cp)2(L)  Formula (1) (where each R is independently H, a C1 to C6 alkyl group, or R13Si, with each R1 being independently H or a C1 to C6 alkyl group, Cp is a cyclopentadienyl group, and L is selected from among formamidinates (NR, R′-fmd), amidinates (NR, R′, R″-amd), and guanidinates (NR, R′, NR″, R′″-gnd)).

公开(公告)号：US20180342391A1

公开(公告)日：2018-11-29

申请号：US15866568

申请日：2018-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Youn-soo KIM ,  Hyun-jun KIM ,  Jin-sun LEE ,  Jae-soon LIM

IPC: H01L21/02 ,  H01L27/11582 ,  H01L21/28 ,  H01L27/108 ,  C23C16/06 ,  C23C16/40 ,  C23C16/02 ,  C23C16/455

CPC classification number: H01L21/02304 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02356 ,  H01L27/10808 ,  H01L27/10852 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/40117

Abstract: A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300° C. to about 600° C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300° C. to about 600° C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

公开(公告)号：US20180076024A1

公开(公告)日：2018-03-15

申请号：US15455879

申请日：2017-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyu-hee PARK ,  Jae-soon LIM ,  Youn-joung CHO ,  Myong-woon KIM ,  Sang-ick LEE ,  Sung-duck LEE ,  Sung-woo CHO

IPC: H01L21/02 ,  H01L21/311 ,  H01L27/11582 ,  C09D1/00 ,  C09D5/24 ,  C07F5/06

CPC classification number: H01L21/02178 ,  C07F5/062 ,  C09D1/00 ,  C09D5/24 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11582

Abstract: An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

公开(公告)号：US20200273747A1

公开(公告)日：2020-08-27

申请号：US16711845

申请日：2019-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Younsoo KIM ,  Gyu-hee PARK ,  Jaesoon LIM ,  Younjoung CHO

IPC: H01L21/768 ,  H01L21/285 ,  H01L27/108 ,  H01L21/8238

Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

公开(公告)号：US20190292207A1

公开(公告)日：2019-09-26

申请号：US16439369

申请日：2019-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Haruyoshi SATO ,  Naoki YAMADA ,  Hiroyuki UCHIUZOU

IPC: C07F7/10

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US20190152996A1

公开(公告)日：2019-05-23

申请号：US16251236

申请日：2019-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Kazuki HARANO ,  Haruyoshi SATO ,  Tsubasa SHIRATORI ,  Naoki YAMADA

IPC: C07F5/00 ,  C23C16/455 ,  C23C16/34 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.