公开(公告)号：US20240331774A1

公开(公告)日：2024-10-03

申请号：US18367677

申请日：2023-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gangmin Lee ,  Jaehue Shin ,  Daeseok Byeon ,  Yongsung Cho

IPC: G11C16/04 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30 ,  G11C29/10

CPC classification number: G11C16/0491 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30 ,  G11C29/10

Abstract: A nonvolatile memory device may include a page buffer, a control signal generator, and a current mirror. The page buffer may be connected to a bitline and may allow a replicated current to flow through a ground terminal in response to a first control signal and a second control signal. The control signal generator may output the first control signal and the second control signal to the page buffer. The current mirror may output, in a virtual cell mode, a control voltage corresponding to a bias current. The control voltage may correspond to the first control signal.