公开(公告)号：US11640797B2

公开(公告)日：2023-05-02

申请号：US17215230

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Dong-Il Park

IPC: G09G3/30 ,  G09G3/3291 ,  G09G3/3233 ,  G09G3/29 ,  H03K19/0185

Abstract: A display driver integrated circuit (IC) is provided. The display driver IC includes a shift register configured to output a digital signal, and a digital-analog converter configured to receive the digital signal and generate a data voltage corresponding to the digital signal, wherein the digital-analog converter includes a delta-sigma modulator configured to output a modulated signal by receiving the digital signal and a first voltage, and performing delta-sigma modulation on the digital signal using the first voltage, and a level shifter configured to receive the modulated signal and a second voltage higher than the first voltage, and amplify the modulated signal using the second voltage.

公开(公告)号：US11114533B2

公开(公告)日：2021-09-07

申请号：US16662258

申请日：2019-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungeun Yun ,  Jun-Gu Kang ,  Dong-Il Park ,  Yongsang Jeong

IPC: H01L29/417 ,  H01L23/535 ,  H01L29/423 ,  H01L27/088 ,  H01L27/12 ,  H01L23/528 ,  H01L23/522

Abstract: A semiconductor device includes: a substrate including a first region and a second region; a first gate stack on the first region of the substrate; a first source/drain contact at a first side of the first gate stack, wherein the first source/drain contact is connected to the substrate; a second gate stack on the second region of the substrate; and a second source/drain contact at a first side of the second gate stack, wherein the second source/drain contact is connected to the substrate, wherein a height of the second source/drain contact is greater than a height of the first source/drain contact, and wherein a width of the second source/drain contact is greater than a width of the first source/drain contact.

公开(公告)号：US10707234B2

公开(公告)日：2020-07-07

申请号：US16204637

申请日：2018-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoon-Sung Choi ,  Dong-Il Park ,  Yuri Masuoka

IPC: H01L27/12 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/092

Abstract: A semiconductor device comprises: a substrate; a first well region of a first conductivity type and a second well region of a second conductivity type formed horizontally adjacent to each other in the substrate; a buried insulation layer formed on the first well region and the second well region; a first semiconductor layer formed to vertically overlap the first well region, and a second semiconductor layer formed to vertically overlap the second well region, on the buried insulation layer; a first isolation layer formed between the first semiconductor layer and the second semiconductor layer on the buried insulation layer; and a conductive layer formed on the first semiconductor layer and the second semiconductor layer to extend over the first semiconductor layer and the second semiconductor layer.

公开(公告)号：US09076886B2

公开(公告)日：2015-07-07

申请号：US13960323

申请日：2013-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Il Park ,  Ae-Gyeong Kim ,  Jong-Sam Kim ,  Kyoung-Eun Uhm ,  Tae-Cheol Lee ,  Yong-Sang Jeong ,  Jin-Ha Jeong

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L21/823468 ,  H01L21/823456 ,  H01L21/823462 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/7834

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.

Abstract translation: 提供了一种半导体器件及其制造方法。 半导体器件包括器件隔离区域，形成在器件隔离区域中的沟槽，连接到器件隔离区域中的沟槽的空穴，沿着沟槽的侧壁形成并相对于空隙向内突出的第一掩模图案， 沿着空隙的侧壁形成的栅极绝缘膜，以及填充沟槽和至少一部分空隙的栅电极。

公开(公告)号：US20140042528A1

公开(公告)日：2014-02-13

申请号：US13960323

申请日：2013-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Il Park ,  Ae-Gyeong Kim ,  Jong-Sam Kim ,  Kyoung-Eun Uhm ,  Tae-Cheol Lee ,  Yong-Sang Jeong ,  Jin-Ha Jeong

IPC: H01L21/8234 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L21/823468 ,  H01L21/823456 ,  H01L21/823462 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/7834

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.

Abstract translation: 提供了一种半导体器件及其制造方法。 半导体器件包括器件隔离区域，形成在器件隔离区域中的沟槽，连接到器件隔离区域中的沟槽的空穴，沿着沟槽的侧壁形成并相对于空隙向内突出的第一掩模图案， 沿着空隙的侧壁形成的栅极绝缘膜，以及填充沟槽和至少一部分空隙的栅电极。