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公开(公告)号：US11960752B2
公开(公告)日：2024-04-16
申请号：US17357084
申请日：2021-06-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun-Seok Kim , Dae-Ho Kim , Yong-Geun Oh , Sung-Jin Moon
CPC classification number: G06F3/0653 , G06F3/0616 , G06F3/0634 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F11/3058
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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公开(公告)号：US20230111732A1
公开(公告)日：2023-04-13
申请号：US18045948
申请日：2022-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： HYUN-SEOK KIM , Dae-Ho Kim , Yong-geun Oh , Sung-Jin Moon
IPC: G06F3/06
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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3.发明授权公开(公告)号：US10224376B2
公开(公告)日：2019-03-05
申请号：US14794207
申请日：2015-07-08
Applicant: Samsung Electronics Co., Ltd. , SNU R&DB Foundation
Inventor： Kyu Sik Kim , Jang-Joo Kim , Gae Hwang Lee , Ryuichi Satoh , Yong Wan Jin , Dae-Ho Kim
Abstract: Provided is an organic photoelectronic device including a first light-transmitting electrode positioned at a light incidence side, a second light-transmitting electrode facing the first light-transmitting electrode, a photoactive layer positioned between the first light-transmitting electrode and the second light-transmitting electrode and selectively absorbing light in a given (or, alternatively, desired or predetermined) wavelength region, and a selective light transmittance layer positioned between the first light-transmitting electrode and the photoactive layer, between the second light-transmitting electrode and the photoactive layer, or between the first light-transmitting electrode and the photoactive layer and between the second light-transmitting electrode and the photoactive layer and increasing transmittance of the light in a wavelength region other than the given (or, alternatively, desired or predetermined) wavelength region absorbed by the photoactive layer, and an electronic device including the image sensor is also provided.
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公开(公告)号：US10198214B2
公开(公告)日：2019-02-05
申请号：US14601552
申请日：2015-01-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun-Seok Kim , Dae-Ho Kim , Yong-Geun Oh , Sung-Jin Moon
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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公开(公告)号：US11093166B2
公开(公告)日：2021-08-17
申请号：US16241488
申请日：2019-01-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun-Seok Kim , Dae-Ho Kim , Yong-Geun Oh , Sung-Jin Moon
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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Patent Agency Ranking
公开(公告)号：US09666817B2
公开(公告)日：2017-05-30
申请号：US14995318
申请日：2016-01-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyusik Kim , Jang-Joo Kim , Dae-Ho Kim
IPC: H01L27/146 , H01L51/42 , H01L51/44 , H01L27/30 , H01L51/00
CPC classification number: H01L51/424 , H01L27/307 , H01L51/0046 , H01L51/442 , H01L51/5004 , Y02E10/549
Abstract: An organic photodetector includes an anode and a cathode facing each other and an active layer between the anode and the cathode and including a p-type semiconductor and an n-type semiconductor, wherein an energy barrier between the anode or the cathode and the active layer is greater than or equal to about 1.3 eV, a difference between a HOMO energy level of the p-type semiconductor and a LUMO energy level of the n-type semiconductor is greater than or equal to about 0.8 eV.
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7.发明申请公开(公告)号：US20190157351A1
公开(公告)日：2019-05-23
申请号：US16251600
申请日：2019-01-18
Applicant: Samsung Electronics Co., Ltd. , SNU R&DB Foundation
Inventor： Kyu Sik KIM , Jang-Joo Kim , Gae Hwang Lee , Ryuichi Satoh , Yong Wan Jin , Dae-Ho Kim
IPC: H01L27/30
Abstract: Provided is an organic photoelectronic device including a first light-transmitting electrode positioned at a light incidence side, a second light-transmitting electrode facing the first light-transmitting electrode, a photoactive layer positioned between the first light-transmitting electrode and the second light-transmitting electrode and selectively absorbing light in a given (or, alternatively, desired or predetermined) wavelength region, and a selective light transmittance layer positioned between the first light-transmitting electrode and the photoactive layer, between the second light-transmitting electrode and the photoactive layer, or between the first light-transmitting electrode and the photoactive layer and between the second light-transmitting electrode and the photoactive layer and increasing transmittance of the light in a wavelength region other than the given (or, alternatively, desired or predetermined) wavelength region absorbed by the photoactive layer, and an electronic device including the image sensor is also provided.
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公开(公告)号：US11972136B2
公开(公告)日：2024-04-30
申请号：US18045948
申请日：2022-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun-Seok Kim , Dae-Ho Kim , Yong-Geun Oh , Sung-Jin Moon
CPC classification number: G06F3/0653 , G06F3/0616 , G06F3/0634 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F11/3058
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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公开(公告)号：US20190155538A1
公开(公告)日：2019-05-23
申请号：US16241488
申请日：2019-01-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun-Seok Kim , Dae-Ho Kim , Yong-Geun Oh , Sung-Jin Moon
IPC: G06F3/06
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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公开(公告)号：US09880781B2
公开(公告)日：2018-01-30
申请号：US15017984
申请日：2016-02-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yonggeun Oh , Dae-Ho Kim , Chul-Woo Lee , Gyucheol Han
CPC classification number: G06F3/0653 , G06F3/0619 , G06F3/0679 , G11C7/04 , G11C7/1045 , G11C16/0483
Abstract: A storage device is provided which includes a nonvolatile memory and a temperature sensor. The temperature sensor is configured to detect a temperature of the storage device. The temperature sensor is configured to output temperature information. The storage device includes a memory controller. The memory controller is configured to access the nonvolatile memory in response to a request of an external host device. The memory controller is configured to obtain the temperature information from the temperature sensor according to a first period in a first mode. The temperature sensor is configured to obtain the temperature information from the temperature sensor according to a second period in a second mode. The second period is shorter than the first period.
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