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公开(公告)号：US11093166B2
公开(公告)日：2021-08-17
申请号：US16241488
申请日：2019-01-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun-Seok Kim , Dae-Ho Kim , Yong-Geun Oh , Sung-Jin Moon
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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Patent Agency Ranking
公开(公告)号：US20230111732A1
公开(公告)日：2023-04-13
申请号：US18045948
申请日：2022-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： HYUN-SEOK KIM , Dae-Ho Kim , Yong-geun Oh , Sung-Jin Moon
IPC: G06F3/06
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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公开(公告)号：US10198214B2
公开(公告)日：2019-02-05
申请号：US14601552
申请日：2015-01-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun-Seok Kim , Dae-Ho Kim , Yong-Geun Oh , Sung-Jin Moon
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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公开(公告)号：US11972136B2
公开(公告)日：2024-04-30
申请号：US18045948
申请日：2022-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun-Seok Kim , Dae-Ho Kim , Yong-Geun Oh , Sung-Jin Moon
CPC classification number: G06F3/0653 , G06F3/0616 , G06F3/0634 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F11/3058
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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公开(公告)号：US20190155538A1
公开(公告)日：2019-05-23
申请号：US16241488
申请日：2019-01-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun-Seok Kim , Dae-Ho Kim , Yong-Geun Oh , Sung-Jin Moon
IPC: G06F3/06
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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公开(公告)号：US11960752B2
公开(公告)日：2024-04-16
申请号：US17357084
申请日：2021-06-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun-Seok Kim , Dae-Ho Kim , Yong-Geun Oh , Sung-Jin Moon
CPC classification number: G06F3/0653 , G06F3/0616 , G06F3/0634 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F11/3058
Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.
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