公开(公告)号：US08958002B2

公开(公告)日：2015-02-17

申请号：US14064812

申请日：2013-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jun Choi ,  Yoon-Dong Park ,  Chris Hong ,  Dae-Lok Bae ,  Jung-Chak Ahn ,  Chang-Rok Moon ,  June-Mo Koo ,  Suk-Pil Kim ,  Hoon-Sang Oh

IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146

CPC classification number: H01L27/14641 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/9212 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract translation: 图像传感器包括：第一基板，包括驱动元件，第一基板上的第一绝缘层和驱动元件;第二基板，包括光电转换元件;以及第二绝缘层，在第二基板上和光电转换元件 。 第二绝缘层的表面位于第一绝缘层的上表面上。 图像传感器包括穿透第二绝缘层和第一绝缘层的一部分的导电连接器。 还公开了形成图像传感器的方法。

公开(公告)号：US09412774B2

公开(公告)日：2016-08-09

申请号：US14660006

申请日：2015-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ha-Kyu Choi ,  Chang-Rok Moon

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: An image sensor includes an inorganic color filter, an organic color filter, and a metal pattern. The inorganic color filter is on a support substrate. The organic color filter is on the support substrate. The organic color filter is spaced apart from the inorganic color filter. The metal pattern is between the inorganic color filter and the organic color filter.

Abstract translation: 图像传感器包括无机滤色器，有机滤色器和金属图案。 无机滤色器在支撑基板上。 有机滤色器在支撑基板上。 有机滤色器与无机滤色器间隔开。 金属图案位于无机滤色器和有机彩色滤光片之间。

公开(公告)号：USRE48755E1

公开(公告)日：2021-09-28

申请号：US16268220

申请日：2019-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Chang-Rok Moon ,  Min-Wook Jung

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

公开(公告)号：US10229949B2

公开(公告)日：2019-03-12

申请号：US15625387

申请日：2017-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-Jun Park ,  Chang-Rok Moon ,  Seung-Hun Shin ,  Seong-Ho Oh ,  Tae-Seok Oh ,  June-Taeg Lee

IPC: H01L29/40 ,  H01L27/146 ,  H01L23/48 ,  H01L25/065 ,  H01L21/768

Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.

公开(公告)号：US09728572B2

公开(公告)日：2017-08-08

申请号：US14561854

申请日：2014-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-Jun Park ,  Chang-Rok Moon ,  Seung-Hun Shin ,  Seong-Ho Oh ,  Tae-Seok Oh ,  June-Taeg Lee

IPC: H01L29/40 ,  H01L27/146 ,  H01L23/48 ,  H01L25/065 ,  H01L21/768

CPC classification number: H01L27/14636 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.

公开(公告)号：US20160056188A1

公开(公告)日：2016-02-25

申请号：US14626549

申请日：2015-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Chang-Rok Moon ,  Min-Wook Jung

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

Abstract translation: 提供图像传感器。 图像传感器包括基板，第一层间绝缘层，第一金属线和屏蔽结构。 衬底包括像素阵列，外围电路区域和布置在像素阵列和外围电路区域之间的接口区域。 第一层间绝缘层形成在基板的第一表面上。 第一金属线设置在像素阵列的第一层间绝缘层上。 第二层间绝缘层设置在第一层间绝缘层上，其中第二层间绝缘层覆盖第一金属线。 屏蔽结构通过衬底在屏蔽结构中电绝缘衬底的像素阵列和外围电路区域的界面区域中。

公开(公告)号：US09853075B2

公开(公告)日：2017-12-26

申请号：US15285018

申请日：2016-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Chang-Rok Moon ,  Min-Wook Jung

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

公开(公告)号：US09461084B2

公开(公告)日：2016-10-04

申请号：US14626549

申请日：2015-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Chang-Rok Moon ,  Min-Wook Jung

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

Abstract translation: 提供图像传感器。 图像传感器包括基板，第一层间绝缘层，第一金属线和屏蔽结构。 衬底包括像素阵列，外围电路区域和布置在像素阵列和外围电路区域之间的接口区域。 第一层间绝缘层形成在基板的第一表面上。 第一金属线设置在像素阵列的第一层间绝缘层上。 第二层间绝缘层设置在第一层间绝缘层上，其中第二层间绝缘层覆盖第一金属线。 屏蔽结构通过衬底在屏蔽结构中电绝缘衬底的像素阵列和外围电路区域的界面区域中。

公开(公告)号：US20140048853A1

公开(公告)日：2014-02-20

申请号：US14064812

申请日：2013-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jun Choi ,  Yoon-Dong Park ,  Chris Hong ,  Dae-Lok Bae ,  Jung-Chak Ahn ,  Chang-Rok Moon ,  June-Mo Koo ,  Suk-Pil Kim ,  Hoon-Sang Oh

IPC: H01L27/146

CPC classification number: H01L27/14641 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/9212 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract translation: 图像传感器包括：第一基板，包括驱动元件，第一基板上的第一绝缘层和驱动元件;第二基板，包括光电转换元件;以及第二绝缘层，在第二基板上和光电转换元件 。 第二绝缘层的表面位于第一绝缘层的上表面上。 图像传感器包括穿透第二绝缘层和第一绝缘层的一部分的导电连接器。 还公开了形成图像传感器的方法。

公开(公告)号：US10943939B2

公开(公告)日：2021-03-09

申请号：US16271917

申请日：2019-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-Jun Park ,  Chang-Rok Moon ,  Seung-Hun Shin ,  Seong-Ho Oh ,  Tae-Seok Oh ,  June-Taeg Lee

IPC: H01L29/40 ,  H01L27/146 ,  H01L23/48 ,  H01L25/065 ,  H01L21/768 ,  H01L25/00

Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.