公开(公告)号：US20140048853A1

公开(公告)日：2014-02-20

申请号：US14064812

申请日：2013-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jun Choi ,  Yoon-Dong Park ,  Chris Hong ,  Dae-Lok Bae ,  Jung-Chak Ahn ,  Chang-Rok Moon ,  June-Mo Koo ,  Suk-Pil Kim ,  Hoon-Sang Oh

IPC: H01L27/146

CPC classification number: H01L27/14641 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/9212 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract translation: 图像传感器包括：第一基板，包括驱动元件，第一基板上的第一绝缘层和驱动元件;第二基板，包括光电转换元件;以及第二绝缘层，在第二基板上和光电转换元件 。 第二绝缘层的表面位于第一绝缘层的上表面上。 图像传感器包括穿透第二绝缘层和第一绝缘层的一部分的导电连接器。 还公开了形成图像传感器的方法。

公开(公告)号：US20140008705A1

公开(公告)日：2014-01-09

申请号：US13835669

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon- Young Choi ,  Kyung-Ho Lee ,  Sang-Jun Choi ,  Tae-Hyoung Koo ,  Sam-Jong Choi

IPC: H01L29/78 ,  H01L29/04

CPC classification number: H01L29/7827 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689 ,  H01L29/045

Abstract: A semiconductor device includes field regions formed in a substrate, and n-type impurity regions disposed between the field regions. At least one of the side surfaces of the field regions has a {100}, {310}, or {311} plane.

Abstract translation: 半导体器件包括形成在衬底中的场区域和设置在场区域之间的n型杂质区域。 场区域的至少一个侧面具有{100}，{310}或{311}平面。

公开(公告)号：US08958002B2

公开(公告)日：2015-02-17

申请号：US14064812

申请日：2013-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jun Choi ,  Yoon-Dong Park ,  Chris Hong ,  Dae-Lok Bae ,  Jung-Chak Ahn ,  Chang-Rok Moon ,  June-Mo Koo ,  Suk-Pil Kim ,  Hoon-Sang Oh

IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146

CPC classification number: H01L27/14641 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/9212 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract translation: 图像传感器包括：第一基板，包括驱动元件，第一基板上的第一绝缘层和驱动元件;第二基板，包括光电转换元件;以及第二绝缘层，在第二基板上和光电转换元件 。 第二绝缘层的表面位于第一绝缘层的上表面上。 图像传感器包括穿透第二绝缘层和第一绝缘层的一部分的导电连接器。 还公开了形成图像传感器的方法。