公开(公告)号：US20200237319A1

公开(公告)日：2020-07-30

申请号：US16751319

申请日：2020-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaemock YI ,  Chaeyeong Lee

IPC: A61B6/02 ,  G06T7/00 ,  A61B6/00 ,  G06T11/00

Abstract: An X-ray image processing method, including obtaining a first X-ray image of an object including a plurality of materials including a first material and a second material; obtaining a first partial image generated by imaging the first material and a second partial image generated by imaging the first material overlapping the second material from the first X-ray image; obtaining first information related to a stereoscopic structure of the first material, based on the first partial image included in the first X-ray image; and obtaining second information about the second material based on the first information and the second partial image.

公开(公告)号：US20240088150A1

公开(公告)日：2024-03-14

申请号：US18300867

申请日：2023-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeondo Jung ,  Chul Kim ,  Kichul Kim ,  Gwirim Park ,  Haejun Yu ,  Chaeyeong Lee ,  Kyungin Choi

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: An integrated circuit device includes a pair of fin-type active regions, which extend in a first horizontal direction on a substrate, and a fin isolation insulator between ones of the pair of fin-type active regions to extend in a second horizontal direction that intersects with the first horizontal direction. The fin isolation insulator includes a first nitrogen-rich barrier film having at least one protrusion at a position that is higher than respective top surfaces of each of the pair of fin-type active regions with respect to the substrate, and a second nitrogen-rich barrier film, which is spaced apart from the first nitrogen-rich barrier film and is in a space defined by the first nitrogen-rich barrier film.

公开(公告)号：US11540785B2

公开(公告)日：2023-01-03

申请号：US16751319

申请日：2020-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaemock Yl ,  Chaeyeong Lee

IPC: A61B6/00 ,  A61B6/02 ,  G06T7/00 ,  G06T11/00

Abstract: An X-ray image processing method, including obtaining a first X-ray image of an object including a plurality of materials including a first material and a second material; obtaining a first partial image generated by imaging the first material and a second partial image generated by imaging the first material overlapping the second material from the first X-ray image; obtaining first information related to a stereoscopic structure of the first material, based on the first partial image included in the first X-ray image; and obtaining second information about the second material based on the first information and the second partial image.