公开(公告)号：US20240155828A1

公开(公告)日：2024-05-09

申请号：US18226049

申请日：2023-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon Cho ,  Namjung Kang

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033 ,  H10B12/50

Abstract: A semiconductor device includes a substrate including a first area and a second area planarly surrounding the first area, a lower electrode disposed on the first area of the substrate and extending in a vertical direction, a supporter surrounding a sidewall of the lower electrode and supporting the lower electrode, a first upper electrode covering the lower electrode, on the lower electrode, the first upper electrode including a first portion disposed within the first area and a second portion disposed within the second area, a dielectric layer arranged between the lower electrode and the first upper electrode, and a second upper electrode disposed on the first portion of the first upper electrode, wherein the second upper electrode is not disposed on the second portion of the first upper electrode.

公开(公告)号：US20240178291A1

公开(公告)日：2024-05-30

申请号：US18431628

申请日：2024-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon Cho ,  Inseok Baek ,  Hyeonok Jung ,  Beomyong Hwang

IPC: H01L29/423 ,  H01L29/10

CPC classification number: H01L29/4238 ,  H01L29/1095

Abstract: A transistor with a shared gate structure includes an active area and a gate. The active area has a body extending in a first direction on a substrate, and a protrusion extending in a second direction perpendicular to the first direction from a central portion of the body in the first direction. The gate is arranged above the active area to overlap a channel area of the active area, and has an inverted pi (II) structure that, from a plan view, surrounds on three sides but does not cover a portion of the active area that includes two corner portions of the active area. The active area is divided into a first active area and a second active area by a separation area extending in the second direction and separating the body and a portion of the protrusion. The protrusion is divided into a first portion separated into two sub-portions by the separation area and a second portion, wherein the first portion is between the body and the second portion in the second direction. Opposite ends of the body in the first direction corresponding to two drain areas, the second portion of the protrusion corresponding to a common source area, and the gate constitute two transistors, wherein the two transistors share the gate.

公开(公告)号：US11929414B2

公开(公告)日：2024-03-12

申请号：US17361890

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon Cho ,  Inseok Baek ,  Hyeonok Jung ,  Beomyong Hwang

IPC: H01L29/423 ,  H01L29/10

CPC classification number: H01L29/4238 ,  H01L29/1095

Abstract: A transistor with a shared gate structure includes an active area and a gate. The active area has a body extending in a first direction on a substrate, and a protrusion extending in a second direction perpendicular to the first direction from a central portion of the body in the first direction. The gate is arranged above the active area to overlap a channel area of the active area, and has an inverted pi () structure that, from a plan view, surrounds on three sides but does not cover a portion of the active area that includes two corner portions of the active area. The active area is divided into a first active area and a second active area by a separation area extending in the second direction and separating the body and a portion of the protrusion. The protrusion is divided into a first portion separated into two sub-portions by the separation area and a second portion, wherein the first portion is between the body and the second portion in the second direction. Opposite ends of the body in the first direction corresponding to two drain areas, the second portion of the protrusion corresponding to a common source area, and the gate constitute two transistors, wherein the two transistors share the gate.

公开(公告)号：US20220157960A1

公开(公告)日：2022-05-19

申请号：US17361890

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon Cho ,  Inseok Baek ,  Hyeonok Jung ,  Beomyong Hwang

IPC: H01L29/423 ,  H01L29/10

Abstract: A transistor with a shared gate structure includes an active area and a gate. The active area has a body extending in a first direction on a substrate, and a protrusion extending in a second direction perpendicular to the first direction from a central portion of the body in the first direction. The gate is arranged above the active area to overlap a channel area of the active area, and has an inverted pi () structure that, from a plan view, surrounds on three sides but does not cover a portion of the active area that includes two corner portions of the active area. The active area is divided into a first active area and a second active area by a separation area extending in the second direction and separating the body and a portion of the protrusion. The protrusion is divided into a first portion separated into two sub-portions by the separation area and a second portion, wherein the first portion is between the body and the second portion in the second direction. Opposite ends of the body in the first direction corresponding to two drain areas, the second portion of the protrusion corresponding to a common source area, and the gate constitute two transistors, wherein the two transistors share the gate.