公开(公告)号：US20240155828A1

公开(公告)日：2024-05-09

申请号：US18226049

申请日：2023-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon Cho ,  Namjung Kang

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033 ,  H10B12/50

Abstract: A semiconductor device includes a substrate including a first area and a second area planarly surrounding the first area, a lower electrode disposed on the first area of the substrate and extending in a vertical direction, a supporter surrounding a sidewall of the lower electrode and supporting the lower electrode, a first upper electrode covering the lower electrode, on the lower electrode, the first upper electrode including a first portion disposed within the first area and a second portion disposed within the second area, a dielectric layer arranged between the lower electrode and the first upper electrode, and a second upper electrode disposed on the first portion of the first upper electrode, wherein the second upper electrode is not disposed on the second portion of the first upper electrode.