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    Base station and method for controlling same in wireless communication system
    2.
    发明授权
    Base station and method for controlling same in wireless communication system 有权

    公开(公告)号：US11076426B2

    公开(公告)日：2021-07-27

    申请号：US16476430

    申请日：2018-01-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chanho An ,  Seungjoo Maeng ,  Seunghee Han ,  Joseph Jeon ,  Jeewoong Kang ,  Younjung Kim ,  Jinyoung Oh ,  Myounghee Jung

    IPC: H04W74/08 ,  H04W88/08

    Abstract: The present disclosure relates to a communication technique and system thereof that fuse a 5G communication system with IoT technology for supporting a higher data rate than a 4G system. The present disclosure may be applied to intelligent services (e.g., smart homes, smart buildings, smart cities, smart cars or connected cars, healthcare, digital education, retail, security and safety related services, etc.) on the basis of 5G communication technology and IoT related technology. A method for controlling a base station according to one embodiment of the present invention may comprise the steps of: generating a first packet including data to be transmitted to a terminal on an unlicensed band; determining whether a channel sensing for using the unlicensed band is completed when the generation of the first packet is completed; and as a result of the determination, when the channel sensing for using the unlicensed band is not completed, omitting a transmission of the first packet.

    Method and apparatus for selecting carrier in mobile communication system
    3.
    发明授权
    Method and apparatus for selecting carrier in mobile communication system 有权

    公开(公告)号：US11463904B2

    公开(公告)日：2022-10-04

    申请号：US16489643

    申请日：2018-02-28

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Jaeyun Ko ,  Seungjoo Maeng ,  Joseph Jeon ,  Dongwook Choi ,  Jungmin Choi ,  Seunghee Han

    IPC: H04W28/02 ,  H04W28/08

    Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method for controlling a terminal in a base station of a mobile communication system, according to an embodiment of the present application, comprises the steps of: selecting at least one candidate terminal for offloading; obtaining information on a neighbor cell of at least one of the candidate terminals; obtaining throughput improvement information according to offloading on the basis of information on the candidate terminal and load information of the neighbor cell of the candidate terminal; obtaining information on a target cell corresponding to the candidate terminal on the basis of the throughput improvement information; selecting a target terminal to be offloaded from the candidate terminals on the basis of the throughput improvement information corresponding to the target cell; and transmitting, to the target terminal, a message instructing offloading to the target cell corresponding to the target terminal.

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    7.
    发明公开
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230377889A1

    公开(公告)日：2023-11-23

    申请号：US18125873

    申请日：2023-03-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sanggyo Chung ,  Chanmi Lee ,  Seunghee Han ,  Jungpyo Hong

    IPC: H01L21/033 ,  H01L21/311

    CPC classification number: H01L21/0337 ,  H01L21/31144

    Abstract: Provided is a method for manufacturing a semiconductor device, in which a mask layer, a buffer layer, and a first mandrel layer are sequentially stacked on a substrate including a first region and a second region. First mandrel patterns are formed on the buffer layer in the first region, and a second mandrel pattern covering the buffer layer in the second region is formed. A first spacer contacting side walls of the first mandrel pattern and the second mandrel pattern is formed on the buffer layer. The first mandrel patterns are removed. A buffer layer pattern and a preliminary mask pattern are formed on the substrate. The second mandrel pattern is removed. In addition, a mask pattern is formed. The buffer layer includes a material having lower electrical conductivity than the mask layer and having etching selectivity with respect to the mask layer.

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