ORGANIC LIGHT EMITTING DISPLAY DEVICE
    3.
    发明申请

    公开(公告)号:US20190252478A1

    公开(公告)日:2019-08-15

    申请号:US16254297

    申请日:2019-01-22

    Abstract: An organic light emitting display device includes a substrate, a first semiconductor element, a second semiconductor element, an insulation layer structure, and a light emitting structure. The substrate has a first region and a second region that is adjacent to the first region. The insulation layer structure is disposed between a second gate electrode and a second active layer of the second semiconductor element. The insulation layer structure includes a first insulation layer having a first etching rate, a second insulation layer disposed on the first insulation layer and having a second etching rate that is greater than the first etching rate, and a third insulation layer disposed on the second insulation layer and having a third etching rate that is less than the second etching rate in a same etching process. The light emitting structure is disposed on the insulation layer structure.

    THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管显示面板及其制造方法

    公开(公告)号:US20160300859A1

    公开(公告)日:2016-10-13

    申请号:US14856405

    申请日:2015-09-16

    Abstract: A thin film transistor display panel including: a first insulating substrate; a first semiconductor disposed between the first insulating substrate and a first gate insulating layer; a gate electrode disposed on the first gate insulating layer, the gate electrode overlapping the first semiconductor; a second gate insulating layer disposed on the gate electrode; a second semiconductor disposed on the second gate insulating layer, the second semiconductor overlapping the gate electrode; an interlayer insulating layer disposed on the second semiconductor; and a source electrode and a drain electrode disposed on the interlayer insulating layer spaced apart from each other, the source electrode and the drain electrode connected to the first semiconductor and the second semiconductor.

    Abstract translation: 一种薄膜晶体管显示面板,包括:第一绝缘基板; 布置在第一绝缘基板和第一栅极绝缘层之间的第一半导体; 设置在所述第一栅极绝缘层上的栅电极,所述栅电极与所述第一半导体重叠; 设置在所述栅电极上的第二栅极绝缘层; 布置在第二栅绝缘层上的第二半导体,第二半导体与栅电极重叠; 设置在所述第二半导体上的层间绝缘层; 以及设置在层间绝缘层彼此间隔开的源电极和漏电极,源电极和漏电极连接到第一半导体和第二半导体。

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210327983A1

    公开(公告)日:2021-10-21

    申请号:US16952762

    申请日:2020-11-19

    Abstract: A display device is provided. The display device includes a substrate, a first active layer of a first transistor and a second active layer of a second transistor which are disposed on the substrate, a first gate insulating layer disposed on the first active layer, an oxide layer disposed on the first gate insulating layer and including an oxide semiconductor, a first gate electrode disposed on the oxide layer, a second gate insulating layer disposed on the first gate electrode and the second active layer, and a second gate electrode which overlaps the second active layer in a thickness direction of the substrate and is disposed on the second gate insulating layer, where the oxide layer overlaps the first active layer and does not overlap the second active layer in the thickness direction.

    DISPLAY DEVICE
    7.
    发明申请

    公开(公告)号:US20210020872A1

    公开(公告)日:2021-01-21

    申请号:US16837540

    申请日:2020-04-01

    Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light-emitting element, a driving transistor to control a driving current supplied to the light-emitting element according to a data voltage applied from the data lines, and a switching transistor to apply the data voltage of the data line to the driving transistor according to a scan signal applied from the scan lines. The driving transistor includes a first active layer having an oxide semiconductor and a first gate electrode below the first active layer. The switching transistor includes a second active layer having a same oxide semiconductor as the oxide semiconductor of the first active layer and a second gate electrode below the second active layer. At least one of the driving transistor and the switching transistor includes an oxide layer above each of the active layers.

    WIRING SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20200006387A1

    公开(公告)日:2020-01-02

    申请号:US16453976

    申请日:2019-06-26

    Abstract: A display device in which a display area and a non-display area are defined, the display device including a wiring substrate, the wiring substrate including: a base substrate; a first thin film transistor disposed on the base substrate, located in the non-display area, and including a first gate pattern, a first semiconductor pattern disposed on the first gate pattern, a first source pattern disposed on the first semiconductor pattern, and a first drain pattern disposed on the first semiconductor pattern and spaced apart from the first source pattern; and a second thin film transistor disposed on the base substrate and located in the display area. A first channel width of the first thin film transistor is greater than a first overlap length of the first gate pattern, the first semiconductor pattern, and the first drain pattern.

    DISPLAY DEVICE
    9.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号:US20160155753A1

    公开(公告)日:2016-06-02

    申请号:US14664589

    申请日:2015-03-20

    CPC classification number: H01L27/124 H01L27/1222 H01L27/1225

    Abstract: The display device includes a substrate, a first gate line extending in a first direction on the substrate, a gate insulating layer formed on the substrate to cover the first gate line, a first semiconductor pattern formed on the gate insulating layer to overlap the first gate line, and including a first region and a second region, a first data line extending in a second direction that is crossing the first gate line on the gate insulating layer, and including a source electrode region that overlaps the first region of the first semiconductor pattern, a drain electrode spaced apart from the source electrode region and formed on the second region of the first semiconductor pattern, and a pixel electrode formed on the drain electrode and electrically connected to the drain electrode. The first semiconductor pattern is arranged in a third direction between the first direction and the second direction.

    Abstract translation: 显示装置包括基板,在基板上沿第一方向延伸的第一栅极线,形成在基板上以覆盖第一栅极线的栅极绝缘层,形成在栅极绝缘层上以与第一栅极重叠的第一半导体图案 并且包括第一区域和第二区域,在与栅极绝缘层上的第一栅极线交叉的第二方向上延伸的第一数据线,并且包括与第一半导体图案的第一区域重叠的源极区域 与源电极区间隔开并形成在第一半导体图案的第二区上的漏电极,以及形成在漏电极上并电连接到漏电极的像素电极。 第一半导体图案在第一方向和第二方向之间沿第三方向排列。

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20250089454A1

    公开(公告)日:2025-03-13

    申请号:US18629271

    申请日:2024-04-08

    Abstract: A display device includes a substrate including a display area and a driving circuit area, a first transistor in the display area, and including a first active layer on the substrate and a first gate electrode on the first active layer, a first gate insulating layer between the first active layer and the first gate electrode, and entirely covering the first active layer, a second transistor in the driving circuit area, and including a second active layer on the substrate and a second gate electrode on the second active layer, a second gate insulating layer between the second active layer and the second gate electrode, covering a part of the second active layer overlapping the second gate electrode, and exposing another part of the second active layer, and a first oxide semiconductor layer between the first gate insulating layer and the first gate electrode.

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