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    ORGANIC LIGHT EMITTING DISPLAY APPARATUS
    1.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY APPARATUS 有权
    有机发光显示装置

    公开(公告)号：US20160035805A1

    公开(公告)日：2016-02-04

    申请号：US14600075

    申请日：2015-01-20

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Yeonhong KIM ,  Moosoon KO ,  Kwangsuk KIM ,  Choongyoul IM

    IPC: H01L27/32 ,  G09G3/32

    CPC classification number: G09G3/3225 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0262 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L51/5209

    Abstract: An organic light emitting display apparatus includes a first pixel and a second pixel. The first pixel includes a first data line, a first driving thin film transistor (TFT), and a first contact metal connected to the first driving TFT and in a layer at a same level as a layer of the first data line. The second pixel includes a second data line, a second driving TFT, and a second contact metal connected to the second driving TFT and in a layer at a same level as a layer of the second data line. The first gap between the first driving TFT and the first contact metal is different from a second gap between the second driving TFT and the second contact metal.

    Abstract translation: 有机发光显示装置包括第一像素和第二像素。 第一像素包括第一数据线，第一驱动薄膜晶体管（TFT）和连接到第一驱动TFT的第一接触金属，并且在与第一数据线的层相同的层中。 第二像素包括与第二驱动TFT连接的第二数据线，第二驱动TFT和第二接触金属，并且与第二数据线的层位于相同电平的层。 第一驱动TFT和第一接触金属之间的第一间隙与第二驱动TFT和第二接触金属之间的第二间隙不同。

    DISPLAY DEVICE
    2.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20240196654A1

    公开(公告)日：2024-06-13

    申请号：US18443199

    申请日：2024-02-15

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Jin Woo LEE ,  Jintaek KIM ,  Yeonhong KIM ,  Pilsuk LEE

    IPC: H10K59/121 ,  H10K59/124 ,  H10K77/10

    CPC classification number: H10K59/1216 ,  H10K59/124 ,  H10K77/111

    Abstract: A display device includes: a substrate; a buffer layer on the substrate; a first active pattern and a second active pattern on the buffer layer and spaced apart from each other; a first gate insulation layer on the first active pattern and the second active pattern; a first gate electrode and a second gate electrode on the first gate insulation layer, the first gate electrode and the second gate electrode respectively overlapping the first active pattern and the second active pattern; a second gate insulation layer on the first gate electrode and the second gate electrode; and a capacitor electrode on the second gate insulation layer, the capacitor electrode overlapping the first gate electrode, wherein a permittivity of the first gate insulation layer is greater than a permittivity of the buffer layer.

    DISPLAY APPARATUS
    4.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号：US20230413620A1

    公开(公告)日：2023-12-21

    申请号：US18460345

    申请日：2023-09-01

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Eunhyun KIM ,  Eunhye KO ,  Yeonhong KIM ,  Kyoungwon LEE ,  Sunhee LEE ,  Junhyung LIM

    IPC: H10K59/126 ,  H10K59/131

    CPC classification number: H10K59/126 ,  H10K59/131 ,  H10K77/111

    Abstract: A display apparatus in which an area of a peripheral area may be reduced while having a simple structure, the display apparatus includes a substrate, a bottom metal layer on the substrate and including a first extension line extending from the peripheral area outside a display area into the display area, a semiconductor layer on the bottom metal layer, a gate layer on the semiconductor layer, a first metal layer on the gate layer, and a second metal layer on the first metal layer and including a first data line extending from the peripheral area into the display area and electrically coupled to the first extension line in the peripheral area.

    DISPLAY DEVICE
    5.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20200295110A1

    公开(公告)日：2020-09-17

    申请号：US16706597

    申请日：2019-12-06

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jin Woo LEE ,  Jintaek KIM ,  Yeonhong KIM ,  Pilsuk LEE

    IPC: H01L27/32

    Abstract: A display device includes: a substrate; a buffer layer on the substrate; a first active pattern and a second active pattern on the buffer layer and spaced apart from each other; a first gate insulation layer on the first active pattern and the second active pattern; a first gate electrode and a second gate electrode on the first gate insulation layer, the first gate electrode and the second gate electrode respectively overlapping the first active pattern and the second active pattern; a second gate insulation layer on the first gate electrode and the second gate electrode; and a capacitor electrode on the second gate insulation layer, the capacitor electrode overlapping the first gate electrode, wherein a permittivity of the first gate insulation layer is greater than a permittivity of the buffer layer.

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