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公开(公告)号:US20160164048A1
公开(公告)日:2016-06-09
申请号:US15044679
申请日:2016-02-16
Applicant: Samsung Display Co., Ltd.
Inventor: Jintaek KIM , Jong Yun KIM , CHEOLHO YU
CPC classification number: H01L51/56 , H01L27/3244 , H01L51/003 , H01L51/5253 , H01L2227/323 , H01L2227/326 , H01L2251/301 , H01L2251/303 , H01L2251/5338
Abstract: Disclosed is a display panel including: a flexible substrate; a buffer layer disposed on the flexible substrate; a pixel disposed on the buffer layer and comprising a thin film transistor and an image device connected to the thin film transistor; a barrier layer disposed on the flexible substrate to protect the pixel from a substance from the flexible substrate; and a diffusion prevention layer disposed between the barrier layer and the buffer layer and configured to prevent hydrogen generated from the barrier layer from being diffused into the thin film transistor.
Abstract translation: 公开了一种显示面板,包括:柔性基板; 设置在柔性基板上的缓冲层; 设置在所述缓冲层上并且包括薄膜晶体管和连接到所述薄膜晶体管的图像器件的像素; 阻挡层,其设置在所述柔性基板上以保护所述像素免受所述柔性基板的物质的影响; 以及设置在所述阻挡层和所述缓冲层之间并且被构造成防止从所述阻挡层产生的氢扩散到所述薄膜晶体管中的扩散防止层。
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公开(公告)号:US20240196654A1
公开(公告)日:2024-06-13
申请号:US18443199
申请日:2024-02-15
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jin Woo LEE , Jintaek KIM , Yeonhong KIM , Pilsuk LEE
IPC: H10K59/121 , H10K59/124 , H10K77/10
CPC classification number: H10K59/1216 , H10K59/124 , H10K77/111
Abstract: A display device includes: a substrate; a buffer layer on the substrate; a first active pattern and a second active pattern on the buffer layer and spaced apart from each other; a first gate insulation layer on the first active pattern and the second active pattern; a first gate electrode and a second gate electrode on the first gate insulation layer, the first gate electrode and the second gate electrode respectively overlapping the first active pattern and the second active pattern; a second gate insulation layer on the first gate electrode and the second gate electrode; and a capacitor electrode on the second gate insulation layer, the capacitor electrode overlapping the first gate electrode, wherein a permittivity of the first gate insulation layer is greater than a permittivity of the buffer layer.
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公开(公告)号:US20200295110A1
公开(公告)日:2020-09-17
申请号:US16706597
申请日:2019-12-06
Applicant: Samsung Display Co., Ltd.
Inventor: Jin Woo LEE , Jintaek KIM , Yeonhong KIM , Pilsuk LEE
IPC: H01L27/32
Abstract: A display device includes: a substrate; a buffer layer on the substrate; a first active pattern and a second active pattern on the buffer layer and spaced apart from each other; a first gate insulation layer on the first active pattern and the second active pattern; a first gate electrode and a second gate electrode on the first gate insulation layer, the first gate electrode and the second gate electrode respectively overlapping the first active pattern and the second active pattern; a second gate insulation layer on the first gate electrode and the second gate electrode; and a capacitor electrode on the second gate insulation layer, the capacitor electrode overlapping the first gate electrode, wherein a permittivity of the first gate insulation layer is greater than a permittivity of the buffer layer.
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公开(公告)号:US20180026081A1
公开(公告)日:2018-01-25
申请号:US15654448
申请日:2017-07-19
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Sungeun LEE , Junghyun KIM , Jintaek KIM , Kiwan AHN , Joosun YOON , Kwangyoung CHOI
IPC: H01L27/32 , G02F1/1368 , G02F1/1362 , G02F1/1343
CPC classification number: H01L27/3223 , G02F1/134309 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/133357 , G02F2201/121 , G02F2201/123 , G02F2202/10 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L2227/323
Abstract: A display device is capable of preventing damage to a signal line in a dehydrogenation process of a semiconductor layer and to a method of manufacturing the display device, the display device including: a substrate; at least one switching element on the substrate; a pixel electrode connected to the at least one switching element; a semiconductor layer on the substrate, the semiconductor layer providing a channel area of the at least one switching element; an insulating layer on the semiconductor layer; and a conductive layer connected to the semiconductor layer through a contact hole of the insulating layer. The insulating layer has a groove that overlaps the semiconductor layer and surrouds the conductive layer in the contact hole.
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