Thin film transistor array panel and manufacturing method thereof
    1.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US09202823B2

    公开(公告)日:2015-12-01

    申请号:US14479557

    申请日:2014-09-08

    CPC classification number: H01L27/1237 H01L27/1255 H01L27/1274

    Abstract: A thin film transistor array panel includes a plurality of pixels on a substrate. Each pixel of the plurality of pixels includes a driving and a switching thin film transistor. The driving thin film transistor includes a first semiconductor including first source and drain regions, a first gate electrode overlapping the first semiconductor, a gate insulating layer between the first semiconductor and the first gate electrode, an oxide layer between the first semiconductor and the gate insulating layer, and first source and drain electrodes. The switching thin film transistor includes a second semiconductor including second source and drain regions, a second gate electrode overlapping the second semiconductor, and second source and drain electrodes. The switching thin film transistor includes the gate insulating layer between the second semiconductor and the second gate electrode. The gate insulating layer contacts an upper portion of the second semiconductor.

    Abstract translation: 薄膜晶体管阵列面板包括在基板上的多个像素。 多个像素中的每个像素包括驱动和开关薄膜晶体管。 驱动薄膜晶体管包括:包括第一源极和漏极区域的第一半导体,与第一半导体重叠的第一栅极电极,在第一半导体和第一栅电极之间的栅极绝缘层,第一半导体和栅极绝缘之间的氧化物层 层和第一源极和漏极。 开关薄膜晶体管包括包括第二源极和漏极区域的第二半导体,与第二半导体重叠的第二栅极电极以及第二源极和漏极电极。 开关薄膜晶体管包括在第二半导体和第二栅电极之间的栅极绝缘层。 栅绝缘层接触第二半导体的上部。

    Display device
    2.
    发明授权

    公开(公告)号:US10957754B2

    公开(公告)日:2021-03-23

    申请号:US15442283

    申请日:2017-02-24

    Abstract: A display device includes a display panel including a flexible region and a low flexibility region, wherein the flexible region may include a first transistor including a first semiconductor layer and a first gate electrode, a first conductor connected to the first semiconductor layer, and a first interlayer insulating layer between the first transistor and the first conductor. The low flexibility region may include a second transistor including a second semiconductor layer and a second gate electrode, a second conductor connected to the second semiconductor layer, and a second interlayer insulating layer between the second transistor and the second conductor. The first interlayer insulating layer may include an organic insulating material, the second interlayer insulating layer includes an inorganic insulating material, and a ratio of channel width to channel length of the first transistor may be different from that of the second transistor.

    DISPLAY DEVICE
    3.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20200212113A1

    公开(公告)日:2020-07-02

    申请号:US16728295

    申请日:2019-12-27

    Abstract: A display device is provided. The display device includes: a display substrate on which a plurality of light-emitting areas are defined; and a color conversion substrate on which a plurality of light-transmitting areas respectively associated with the plurality of light-emitting areas and light-blocking areas between the plurality of light-transmitting areas are defined, the color conversion substrate comprising color patterns in the light-blocking areas, and light-blocking members on the color patterns, wherein at least one of the light-emitting areas has an area smaller than the area of the light-transmitting area that overlaps it in a thickness direction, and the color patterns include a blue colorant.

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