公开(公告)号：US20230071179A1

公开(公告)日：2023-03-09

申请号：US18050412

申请日：2022-10-27

Applicant: Samsung Display Co., Ltd.

Inventor： JUNG YUB SEO ,  Tetsuhiro Tanaka ,  Hee Won Yoon ,  Shin Beom Choi

IPC: H01L27/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

Abstract: A display device includes a base substrate; an oxide semiconductor layer disposed on the base substrate; a first gate insulating layer disposed on a first channel region of the oxide semiconductor layer and that overlaps the first channel region thereof; a first upper gate electrode disposed on the first gate insulating layer ; and an upper interlayer insulating layer disposed on the first upper gate electrode, the first upper gate electrode, and the oxide semiconductor layer, wherein the upper interlayer insulating layer includes a first upper interlayer insulating layer, a second upper interlayer insulating layer, and a third upper interlayer insulating layer, the first upper interlayer insulating layer includes silicon oxide, each of the second and third upper interlayer insulating layers include silicon nitride, and a hydrogen concentration in the second upper interlayer insulating layer is less than a hydrogen concentration in the third upper interlayer insulating layer.

公开(公告)号：US11502110B2

公开(公告)日：2022-11-15

申请号：US17079608

申请日：2020-10-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung Yub Seo ,  Tetsuhiro Tanaka ,  Hee Won Yoon ,  Shin Beom Choi

IPC: H01L27/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

Abstract: A display device includes a base substrate; an oxide semiconductor layer disposed on the base substrate; a first gate insulating layer disposed on a first channel region of the oxide semiconductor layer and that overlaps the first channel region thereof; a first upper gate electrode disposed on the first gate insulating layer; and an upper interlayer insulating layer disposed on the first upper gate electrode, the first upper gate electrode, and the oxide semiconductor layer, wherein the upper interlayer insulating layer includes a first upper interlayer insulating layer, a second upper interlayer insulating layer, and a third upper interlayer insulating layer, the first upper interlayer insulating layer includes silicon oxide, each of the second and third upper interlayer insulating layers include silicon nitride, and a hydrogen concentration in the second upper interlayer insulating layer is less than a hydrogen concentration in the third upper interlayer insulating layer.

公开(公告)号：US12027527B2

公开(公告)日：2024-07-02

申请号：US18050412

申请日：2022-10-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung Yub Seo ,  Tetsuhiro Tanaka ,  Hee Won Yoon ,  Shin Beom Choi

IPC: H01L27/12 ,  H01L29/786 ,  H10K50/80 ,  H10K59/121 ,  H10K59/122 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131

CPC classification number: H01L27/1222 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1255 ,  H01L27/1274 ,  H01L29/78606 ,  H01L29/7869 ,  H10K50/80 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/122 ,  H10K59/123 ,  H10K59/124 ,  H10K59/1315

Abstract: A display device includes a base substrate; an oxide semiconductor layer disposed on the base substrate; a first gate insulating layer disposed on a first channel region of the oxide semiconductor layer and that overlaps the first channel region thereof; a first upper gate electrode disposed on the first gate insulating layer; and an upper interlayer insulating layer disposed on the first upper gate electrode, the first upper gate electrode, and the oxide semiconductor layer, wherein the upper interlayer insulating layer includes a first upper interlayer insulating layer, a second upper interlayer insulating layer, and a third upper interlayer insulating layer, the first upper interlayer insulating layer includes silicon oxide, each of the second and third upper interlayer insulating layers include silicon nitride, and a hydrogen concentration in the second upper interlayer insulating layer is less than a hydrogen concentration in the third upper interlayer insulating layer.