公开(公告)号：US20230071179A1

公开(公告)日：2023-03-09

申请号：US18050412

申请日：2022-10-27

Applicant: Samsung Display Co., Ltd.

Inventor： JUNG YUB SEO ,  Tetsuhiro Tanaka ,  Hee Won Yoon ,  Shin Beom Choi

IPC: H01L27/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

Abstract: A display device includes a base substrate; an oxide semiconductor layer disposed on the base substrate; a first gate insulating layer disposed on a first channel region of the oxide semiconductor layer and that overlaps the first channel region thereof; a first upper gate electrode disposed on the first gate insulating layer ; and an upper interlayer insulating layer disposed on the first upper gate electrode, the first upper gate electrode, and the oxide semiconductor layer, wherein the upper interlayer insulating layer includes a first upper interlayer insulating layer, a second upper interlayer insulating layer, and a third upper interlayer insulating layer, the first upper interlayer insulating layer includes silicon oxide, each of the second and third upper interlayer insulating layers include silicon nitride, and a hydrogen concentration in the second upper interlayer insulating layer is less than a hydrogen concentration in the third upper interlayer insulating layer.

公开(公告)号：US12108635B2

公开(公告)日：2024-10-01

申请号：US17348179

申请日：2021-06-15

Applicant: Samsung Display Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Jung Yub Seo ,  Ki Seong Seo ,  Yeong Gyu Kim ,  Hee Won Yoon

IPC: H01L27/32 ,  H01L29/786 ,  H10K59/124

CPC classification number: H10K59/124 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display device comprises a base substrate, a lower interlayer dielectric layer, an oxide semiconductor layer including a first channel region, a first drain region disposed on one side of the first channel region, and a first source region, a first gate insulating layer, a first upper gate electrode, an upper interlayer dielectric layer, and a first source electrode and a first drain electrode, wherein the lower interlayer dielectric layer includes a first lower interlayer dielectric layer disposed on the base substrate, and a second lower interlayer dielectric layer disposed on the first lower interlayer dielectric layer, wherein the first lower interlayer dielectric layer includes silicon nitride and the second lower interlayer dielectric layer comprises silicon oxide, and wherein a composition ratio of nitrogen to silicon in the first lower interlayer dielectric layer ranges from 0.8 to 0.89.

公开(公告)号：US11502110B2

公开(公告)日：2022-11-15

申请号：US17079608

申请日：2020-10-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung Yub Seo ,  Tetsuhiro Tanaka ,  Hee Won Yoon ,  Shin Beom Choi

IPC: H01L27/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

Abstract: A display device includes a base substrate; an oxide semiconductor layer disposed on the base substrate; a first gate insulating layer disposed on a first channel region of the oxide semiconductor layer and that overlaps the first channel region thereof; a first upper gate electrode disposed on the first gate insulating layer; and an upper interlayer insulating layer disposed on the first upper gate electrode, the first upper gate electrode, and the oxide semiconductor layer, wherein the upper interlayer insulating layer includes a first upper interlayer insulating layer, a second upper interlayer insulating layer, and a third upper interlayer insulating layer, the first upper interlayer insulating layer includes silicon oxide, each of the second and third upper interlayer insulating layers include silicon nitride, and a hydrogen concentration in the second upper interlayer insulating layer is less than a hydrogen concentration in the third upper interlayer insulating layer.

公开(公告)号：US12027527B2

公开(公告)日：2024-07-02

申请号：US18050412

申请日：2022-10-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung Yub Seo ,  Tetsuhiro Tanaka ,  Hee Won Yoon ,  Shin Beom Choi

IPC: H01L27/12 ,  H01L29/786 ,  H10K50/80 ,  H10K59/121 ,  H10K59/122 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131

CPC classification number: H01L27/1222 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1255 ,  H01L27/1274 ,  H01L29/78606 ,  H01L29/7869 ,  H10K50/80 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/122 ,  H10K59/123 ,  H10K59/124 ,  H10K59/1315

Abstract: A display device includes a base substrate; an oxide semiconductor layer disposed on the base substrate; a first gate insulating layer disposed on a first channel region of the oxide semiconductor layer and that overlaps the first channel region thereof; a first upper gate electrode disposed on the first gate insulating layer; and an upper interlayer insulating layer disposed on the first upper gate electrode, the first upper gate electrode, and the oxide semiconductor layer, wherein the upper interlayer insulating layer includes a first upper interlayer insulating layer, a second upper interlayer insulating layer, and a third upper interlayer insulating layer, the first upper interlayer insulating layer includes silicon oxide, each of the second and third upper interlayer insulating layers include silicon nitride, and a hydrogen concentration in the second upper interlayer insulating layer is less than a hydrogen concentration in the third upper interlayer insulating layer.