公开(公告)号：US20220392988A1

公开(公告)日：2022-12-08

申请号：US17342262

申请日：2021-06-08

Applicant: Samsung Display Co., Ltd.

Inventor： JINSUNG AN ,  SEOKJE SEONG ,  SEONGJUN LEE

IPC: H01L27/32

Abstract: A display device includes: a substrate; a first active pattern on the substrate; a second active pattern on the first active pattern; a first upper electrode on the second active pattern and having an island shape; and a first signal line on the first upper electrode, being electrically connected to the first upper electrode, and having an electrical resistance smaller than an electrical resistance of the first upper electrode.

公开(公告)号：US20220199741A1

公开(公告)日：2022-06-23

申请号：US17381579

申请日：2021-07-21

Applicant: Samsung Display Co., Ltd.

Inventor： CHANGHO YI ,  SUNGHO KIM ,  SEOKJE SEONG ,  YOON-JONG CHO ,  HYERI CHO

IPC: H01L27/32

Abstract: A display device includes a substrate, a first lower pattern disposed on the substrate, a second lower pattern disposed in a same layer as the first lower pattern and integrally formed with the first lower pattern, an etch stopper disposed on the second lower pattern, a power voltage line disposed on the first lower pattern, and a transfer pattern disposed on the etch stopper, connected to the power voltage line, and contacting the second lower pattern through a contact hole defined through the etch stopper.

公开(公告)号：US20190355799A1

公开(公告)日：2019-11-21

申请号：US16412059

申请日：2019-05-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： WOO HO JEONG ,  SEOKJE SEONG ,  SEMYUNG KWON ,  YOON HO KIM ,  BYUNGJU LEE

IPC: H01L27/32 ,  H01L51/00

Abstract: A TFT substrate includes a first active pattern, a first gate insulation, and a first gate. A second gate is on a second gate insulation covering the first gate. A source connection electrode contacts a source region of the first active pattern. A drain connection electrode contacts its drain region. A second active pattern is on a first insulation covering the second gate. A third gate insulation covers the second active pattern. A third gate is disposed on the third gate insulation. A second insulation interlayer covers the third gate. A first source, a first drain, a second source, and a second drain are disposed on the second insulation interlayer. The first source and the first drain contact the source connection electrode and the drain connection electrode. The second source and the second drain contact a source region and a drain region of the second active pattern.

公开(公告)号：US20250072220A1

公开(公告)日：2025-02-27

申请号：US18948471

申请日：2024-11-15

Applicant: Samsung Display Co., Ltd.

Inventor： HYEONWOO SHIN ,  SEOKJE SEONG ,  YUNSIK JOO

IPC: H10K59/121 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

Abstract: A display device is disclosed that may include a first active layer disposed on a substrate, a scan line disposed on the first active layer, extending in a first direction and including a first protruding portion protruding in a second direction crossing the first direction, a first compensation control line disposed on the first active layer, extending in the first direction and spaced apart from the scan line in the second direction, and a second active layer disposed on the scan line and the first compensation control line, overlapping the scan line and the first compensation control line and including a second protruding portion protruding in the first direction. The first protruding portion may be positioned outside the second active layer in the first direction in a plan view.

公开(公告)号：US20220149133A1

公开(公告)日：2022-05-12

申请号：US17360081

申请日：2021-06-28

Applicant: Samsung Display Co., Ltd.

Inventor： SEUNGHYUN LEE ,  SUNGHO KIM ,  SEOKJE SEONG ,  JINSUNG AN ,  MINWOO WOO ,  WANGWOO LEE ,  HYUNG JOO JUN

IPC: H01L27/32

Abstract: An organic light emitting display device includes a first transistor including a first active region and a first gate electrode disposed on the first active region, a third transistor including a third lower gate electrode disposed on the first gate electrode, a third active region disposed on the third lower gate electrode, and a third upper gate electrode disposed on the third active region, and a fourth transistor including a fourth active region disposed in the same layer as the first active region and a fourth gate electrode disposed on the fourth active region. The first transistor is a first-type transistor, and the fourth transistor is a second-type transistor different from the first-type transistor.

公开(公告)号：US20210036082A1

公开(公告)日：2021-02-04

申请号：US17063698

申请日：2020-10-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YOON-JONG CHO ,  SUYEON YUN ,  SEOKJE SEONG ,  SEONGJUN LEE ,  JOONHOO CHOI ,  SEMYUNG KWON ,  KYUNGHYUN BAEK

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3225 ,  H01L51/52

Abstract: A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.

公开(公告)号：US20250040251A1

公开(公告)日：2025-01-30

申请号：US18913255

申请日：2024-10-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YOON-JONG CHO ,  SEOKJE SEONG ,  SEONGJUN LEE ,  YOONJEE SHIN ,  SUYEON YUN ,  WOOHO JEONG ,  JOONHOO CHOI

IPC: H01L27/12 ,  G09G3/3266 ,  G09G3/3275 ,  H10K50/11 ,  H10K50/844 ,  H10K59/126 ,  H10K59/131 ,  H10K71/00 ,  H10K77/10 ,  H10K102/00

Abstract: A display panel includes a base layer including a first area and a second area. At least one inorganic layer disposed on the base layer overlaps the first area and the second area. The at least one inorganic layer comprises a lower opening. A first thin-film transistor is disposed on the at least one inorganic layer. The first thin-film transistor includes a silicon semiconductor pattern. A second thin-film transistor is disposed on the at least one inorganic layer. The second thin-film transistor includes an oxide semiconductor pattern. A plurality of insulation layers overlap the first area and the second area. An upper opening extends from the lower opening. A signal line is electrically connected to the second thin-film transistor. An organic layer is disposed in the lower opening and the upper opening. A light emitting element is disposed on the organic layer.

公开(公告)号：US20230402007A1

公开(公告)日：2023-12-14

申请号：US18064813

申请日：2022-12-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SOOJUNG CHAE ,  SEOKHWAN BANG ,  SEOKJE SEONG ,  JINSEOK OH ,  Woobin Lee ,  JUNE WHAN CHOI

IPC: G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0809

Abstract: A pixel circuit includes a first driving transistor including a gate electrode connected to a first node, a first electrode to receive a first power voltage, and a second electrode connected to a second node, a second driving transistor including a gate electrode and a second electrode connected to the second node, a first electrode to receive the first power voltage, and a back gate electrode connected to the first node, a write transistor including a first electrode to receive a data voltage and a second electrode connected to the first node, an initialization transistor including a gate electrode to receive an initialization gate signal, a first electrode to receive an initialization voltage, and a second electrode connected to the second node, a storage capacitor connected to the first and second nodes, and a light emitting element connected to the second node and configured to receive a second power voltage.

公开(公告)号：US20230216002A1

公开(公告)日：2023-07-06

申请号：US17891441

申请日：2022-08-19

Applicant: Samsung Display Co., Ltd.

Inventor： CHANGHO YI ,  KYEONGWOO JANG ,  SUNGHO KIM ,  JOONHYOUNG PARK ,  SEOKJE SEONG ,  MINWOO WOO ,  YOON-JONG CHO ,  HYERI CHO

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/54 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/005 ,  H01L33/54 ,  H01L2933/005 ,  H01L2933/0066

Abstract: A display panel includes a substrate including adjacently-positioned first display area and second display area, a first inorganic insulation layer on the substrate and defining a transmission part in the second display area, a second inorganic insulation layer disposed on the first inorganic insulation layer and covering an inner surface and a bottom surface of the transmission part, a transparent wire on the second inorganic insulation layer in the second display area a via insulation layer on the second inorganic insulation layer and the transparent wire and including an organic material, a first light emitting element on the via insulation layer in the first display area, a second light emitting element on the via insulation layer in the second display area and electrically connected to the transparent wire, and an encapsulation layer covering the first and the second light emitting elements.

公开(公告)号：US20190115407A1

公开(公告)日：2019-04-18

申请号：US16115730

申请日：2018-08-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YOON-JONG CHO ,  SUYEON YUN ,  SEOKJE SEONG ,  SEONGJUN LEE ,  JOONHOO CHOI ,  SEMYUNG KWON ,  KYUNGHYUN BAEK

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3225 ,  H01L51/52

Abstract: A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.