公开(公告)号：US20240088167A1

公开(公告)日：2024-03-14

申请号：US18514930

申请日：2023-11-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YOON-JONG CHO ,  SEOKJE SEONG ,  SEONGJUN LEE ,  YOONJEE SHIN ,  SUYEON YUN ,  WOOHO JEONG ,  JOONHOO CHOI

IPC: H01L27/12 ,  G09G3/3266 ,  G09G3/3275 ,  H10K50/11 ,  H10K50/844 ,  H10K59/126 ,  H10K59/131 ,  H10K71/00 ,  H10K77/10

CPC classification number: H01L27/124 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/1225 ,  H10K50/11 ,  H10K50/844 ,  H10K59/126 ,  H10K59/131 ,  H10K71/00 ,  H10K77/111 ,  H10K2102/311

Abstract: A display panel includes a base layer including a first area and a second area. At least one inorganic layer disposed on the base layer overlaps the first area and the second area. The at least one inorganic layer comprises a lower opening. A first thin-film transistor is disposed on the at least one inorganic layer. The first thin-film transistor includes a silicon semiconductor pattern. A second thin-film transistor is disposed on the at least one inorganic layer. The second thin-film transistor includes an oxide semiconductor pattern. A plurality of insulation layers overlap the first area and the second area. An upper opening extends from the lower opening. A signal line is electrically connected to the second thin-film transistor. An organic layer is disposed in the lower opening and the upper opening. A light emitting element is disposed on the organic layer.

公开(公告)号：US20250040251A1

公开(公告)日：2025-01-30

申请号：US18913255

申请日：2024-10-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YOON-JONG CHO ,  SEOKJE SEONG ,  SEONGJUN LEE ,  YOONJEE SHIN ,  SUYEON YUN ,  WOOHO JEONG ,  JOONHOO CHOI

IPC: H01L27/12 ,  G09G3/3266 ,  G09G3/3275 ,  H10K50/11 ,  H10K50/844 ,  H10K59/126 ,  H10K59/131 ,  H10K71/00 ,  H10K77/10 ,  H10K102/00

Abstract: A display panel includes a base layer including a first area and a second area. At least one inorganic layer disposed on the base layer overlaps the first area and the second area. The at least one inorganic layer comprises a lower opening. A first thin-film transistor is disposed on the at least one inorganic layer. The first thin-film transistor includes a silicon semiconductor pattern. A second thin-film transistor is disposed on the at least one inorganic layer. The second thin-film transistor includes an oxide semiconductor pattern. A plurality of insulation layers overlap the first area and the second area. An upper opening extends from the lower opening. A signal line is electrically connected to the second thin-film transistor. An organic layer is disposed in the lower opening and the upper opening. A light emitting element is disposed on the organic layer.