公开(公告)号：US20230403883A1

公开(公告)日：2023-12-14

申请号：US18127801

申请日：2023-03-29

Applicant: Samsung Display Co., Ltd.

Inventor： JONGHYUN YUN ,  JUNYOUNG KIM ,  YURI OH ,  HYUNG JOO JUN

IPC: H10K59/122 ,  H10K71/20 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K71/233 ,  H10K59/1201

Abstract: A display device includes a plurality of pixel electrodes spaced apart from each other, in which each pixel electrode includes a central part and a peripheral part surrounding the central part, a pixel defining layer disposed on the plurality of pixel electrodes and including an overlap part overlapping the peripheral part when viewed in a plan view, and a lateral side to define a pixel opening exposing the central part, in which a portion of the overlap part has an undercut, a light emitting material disposed on the central part exposed through the pixel opening, and a common electrode including a first part disposed on the light emitting material on the central part and a second part disposed on the pixel defining layer, in which the first part is disconnected from the second part along the undercut portion.

公开(公告)号：US20220149133A1

公开(公告)日：2022-05-12

申请号：US17360081

申请日：2021-06-28

Applicant: Samsung Display Co., Ltd.

Inventor： SEUNGHYUN LEE ,  SUNGHO KIM ,  SEOKJE SEONG ,  JINSUNG AN ,  MINWOO WOO ,  WANGWOO LEE ,  HYUNG JOO JUN

IPC: H01L27/32

Abstract: An organic light emitting display device includes a first transistor including a first active region and a first gate electrode disposed on the first active region, a third transistor including a third lower gate electrode disposed on the first gate electrode, a third active region disposed on the third lower gate electrode, and a third upper gate electrode disposed on the third active region, and a fourth transistor including a fourth active region disposed in the same layer as the first active region and a fourth gate electrode disposed on the fourth active region. The first transistor is a first-type transistor, and the fourth transistor is a second-type transistor different from the first-type transistor.